X-On Electronics has gained recognition as a prominent supplier of PMN42XPE,115 MOSFET across the USA, India, Europe, Australia, and various other global locations. PMN42XPE,115 MOSFET are a product manufactured by NXP. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

PMN42XPE,115 NXP

PMN42XPE,115 electronic component of NXP
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See Product Specifications
Part No.PMN42XPE,115
Manufacturer: NXP
Category: MOSFET
Description: MOSFET PMN42XPE/SC-74/REEL7
Datasheet: PMN42XPE,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.3639
10 : USD 0.2846
100 : USD 0.1544
1000 : USD 0.1196
3000 : USD 0.1066
9000 : USD 0.1027
24000 : USD 0.1014
45000 : USD 0.1001
99000 : USD 0.0962
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PMN42XPE,115 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMN42XPE,115 and other electronic components in the MOSFET category and beyond.

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PMN42XPE 20 V, single P-channel Trench MOSFET 14 August 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Fast switching Trench MOSFET technology 2 kV ESD protection 1.3 Applications Relay driver High-speed line driver High-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -20 V DS j V gate-source voltage -12 - 12 V GS I drain current V = -4.5 V T = 25 C t 5 s 1 - - -5.7 A D GS amb Static characteristics R drain-source on-state V = -4.5 V I = -3 A T = 25 C - 41 46 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm .Nexperia PMN42XPE 20 V, single P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 D drain 6 5 4 2 D drain 3 G gate G 1 2 3 4 S source TSOP6 (SOT457) 5 D drain S 6 D drain 017aaa259 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMN42XPE TSOP6 plastic surface-mounted package (TSOP6) 6 leads SOT457 4. Marking Table 4. Marking codes Type number Marking code PMN42XPE WE 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T = 25 C - -20 V DS j V gate-source voltage -12 12 V GS I drain current V = -4.5 V T = 25 C t 5 s 1 - -5.7 A D GS amb V = -4.5 V T = 25 C 1 - -4 A GS amb V = -4.5 V T = 100 C 1 - -2.9 A GS amb I peak drain current T = 25 C single pulse t 10 s - -16 A DM amb p P total power dissipation T = 25 C 2 - 500 mW tot amb 1 - 1310 mW T = 25 C - 8330 mW sp PMN42XPE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 14 August 2012 2 / 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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