PMN30XPEX Nexperia

PMN30XPE 20 V, P-channel Trench MOSFET 16 April 2018 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Enhanced power dissipation capability of 1390 mW 3. Applications Relay driver High-speed line driver High-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -20 V DS j V gate-source voltage -12 - 12 V GS I drain current V = -4.5 V T = 25 C t 5 s 1 - - -7 A D GS amb Static characteristics R drain-source on-state V = -4.5 V I = -5.3 A T = 25 C - 28 34 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm .Nexperia PMN30XPE 20 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 D drain 6 5 4 D 2 D drain 3 G gate G 1 2 3 4 S source TSOP6 (SOT457) 5 D drain 6 D drain S 017aaa259 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMN30XPE TSOP6 plastic surface-mounted package (TSOP6) 6 leads SOT457 7. Marking Table 4. Marking codes Type number Marking code PMN30XPE 3F PMN30XPE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2018. All rights reserved Product data sheet 16 April 2018 2 / 15