X-On Electronics has gained recognition as a prominent supplier of PMN30UNX MOSFET across the USA, India, Europe, Australia, and various other global locations. PMN30UNX MOSFET are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

PMN30UNX Nexperia

PMN30UNX electronic component of Nexperia
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See Product Specifications
Part No.PMN30UNX
Manufacturer: Nexperia
Category: MOSFET
Description: MOSFET PMN30UN/SC-74/REEL 7" Q1/T1 *S
Datasheet: PMN30UNX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3564 ea
Line Total: USD 0.36

Availability - 53
Ship by Mon. 05 Aug to Thu. 08 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
53
Ship by Mon. 05 Aug to Thu. 08 Aug
MOQ : 1
Multiples : 1
1 : USD 0.3564
10 : USD 0.2951
30 : USD 0.2655
100 : USD 0.2349
500 : USD 0.2073
1000 : USD 0.1982

   
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RoHS - XON
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We are delighted to provide the PMN30UNX from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMN30UNX and other electronic components in the MOSFET category and beyond.

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The PMN30UNX with MOSFET PMN30UN/SC-74/REEL 7" Q1/T1*S is one of the Nexperia MOSFET product families. It is a N-channel TrenchMOS™ logic level FET that utilises the company's trench PowerMOS cell structure. The FET has a gate-source voltage (VGS) of -20V and delivers a maximum drain current (ID) of 30A. It is optimised for low on-resistance (RON) as well as low gate charge (Qg) and on-state drain-source resistance (RDS(ON)). The PMN30UNX is also ideal for higher frequencies due to its low Miller capacitance (Ciss) and fast switching speed, making it suitable for a variety of high frequency power converters and other types of circuits.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.

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