X-On Electronics has gained recognition as a prominent supplier of DMP2170U-7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMP2170U-7 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMP2170U-7 Diodes Incorporated

DMP2170U-7 electronic component of Diodes Incorporated
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Part No.DMP2170U-7
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET MOSFET BVDSS: 8V-24V
Datasheet: DMP2170U-7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3335 ea
Line Total: USD 0.33 
Availability - 6650
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2193
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.1385
10 : USD 0.1222
30 : USD 0.1152
100 : USD 0.1064
500 : USD 0.1023
1000 : USD 0.1

6650
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3335
10 : USD 0.2265
100 : USD 0.1173
1000 : USD 0.1058
3000 : USD 0.1012
9000 : USD 0.0782

   
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We are delighted to provide the DMP2170U-7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMP2170U-7 and other electronic components in the MOSFETs category and beyond.

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DMP2170U 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max BVDSS RDS(ON) max Low Input Capacitance TA = +25C Fast Switching Speed 90m V = -4.5V -3.1A GS Low Input/Output Leakage -20V 250m V = -2.5V -1.8A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: SOT23 (R ) and yet maintain superior switching performance, making it DS(ON) Case Material: Molded Plastic, Green Molding Compound. ideal for high-efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Battery Charging Terminals: Finish Matte Tin Annealed over Copper Leadframe. Power Management Functions Solderable per MIL-STD-202, Method 208 DC-DC Converters Terminals Connections: See Diagram Below Portable Power Adaptors Weight: 0.009 grams (Approximate) D SOT23 D G G S S Top View Top View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMP2170U-7 SOT23 3,000/Tape & Reel DMP2170U-13 SOT23 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP2170U Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -20 V DSS Gate-Source Voltage V 12 V GSS Steady T = +25C -3.1 A Continuous Drain Current (Note 6) V = -4.5V I A GS D State -2.5 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) -1.25 A I S -13 A Pulsed Drain Current (10s pulse, duty cycle = 1%) I DM Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 0.78 W D Thermal Resistance, Junction to Ambient (Note 5) Steady State 163 C/W R JA Total Power Dissipation (Note 6) P 1.28 W D Thermal Resistance, Junction to Ambient (Note 6) Steady State 99 C/W R JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV -20 - - V V = 0V, I = -250A DSS GS D - - -1.0 A Zero Gate Voltage Drain Current T = +25C I V = -20V, V = 0V J DSS DS GS Gate-Source Leakage - - 100 nA I V = 12V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage -0.4 -1.01 -1.25 V V V = V , I = -250A GS(TH) DS GS D V = -4.5V, I = -3.5A 62 90 GS D Static Drain-Source On-Resistance R - 92 180 m V = -2.7V, I = -3.0A DS(ON) GS D 101 250 V = -2.5V, I = -2.6A GS D Diode Forward Voltage - -0.8 -1.1 V V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance - 303 - pF C iss V = -10V, V = 0V, DS GS Output Capacitance - 46 - pF C oss f = 1.0MHz Reverse Transfer Capacitance - 37 - pF C rss Gate Resistance - 16 - R V = 0V, V = 0V, f = 1MHz g DS GS - 3.6 - Total Gate Charge (V = -4.5V) Q nC GS g - 7.8 - Total Gate Charge (V = -10V) Q nC GS g V = -10V, I = -1.5A DS D - 0.6 - Gate-Source Charge Q nC gs - 1.1 - Gate-Drain Charge Q nC gd 5.4 Turn-On Delay Time - - ns t D(ON) Turn-On Rise Time - 18.3 - ns t V = -10V, V = -4.5V, R DD GS Turn-Off Delay Time - 16.2 - ns I = -3.5A, R = 6 t D G D(OFF) Turn-Off Fall Time - 13.6 - ns t F Body Diode Reverse Recovery Time - 5.5 - ns t I = -2.0A, dI/dt = -100A/s RR S 1.23 Body Diode Reverse Recovery Charge Q - - nC I = -2.0A, dI/dt = -100A/s RR S Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMP2170U June 2016 Diodes Incorporated www.diodes.com Document number: DS38558 Rev. 1 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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