PMN30UNE Nexperia

PMN30UNE 20 V, N-channel Trench MOSFET 29 January 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissipation capability of 1240 mW ElectroStatic Discharge (ESD) protection > 1 kV HBM 3. Applications LED driver Power management Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 20 V DS j V gate-source voltage -8 - 8 V GS I drain current V = 4.5 V T = 25 C t 5 s 1 - - 6 A D GS amb Static characteristics R drain-source on-state V = 4.5 V I = 4.8 A T = 25 C - 28 36 m DSon GS D j resistance 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . Scan or click this QR code to view the latest information for this product SOT457NXP Semiconductors PMN30UNE 20 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 6 5 4 D 1 D drain 2 D drain 3 G gate G 1 2 3 4 S source TSOP6 (SOT457) 5 D drain S 6 D drain 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMN30UNE TSOP6 plastic surface-mounted package (TSOP6) 6 leads SOT457 7. Marking Table 4. Marking codes Type number Marking code PMN30UNE G8 PMN30UNE All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2016. All rights reserved Product data sheet 29 January 2016 2 / 16