IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) 600 DS Definition R ( )V = 10 V 2.2 DS(on) GS Low Gate Charge Q Results in Simple Drive g Q (Max.) (nC) 23 g Requirement Q (nC) 5.4 gs Improved Gate, Avalanche and Dynamic dV/dt Q (nC) 11 Ruggedness gd Fully Characterized Capacitance and Avalanche Voltage Configuration Single and Current D 2 2 Effective C Specified oss I PAK (TO-262) D PAK (TO-263) Compliant to RoHS Directive 2002/95/EC APPLICATIONS Switch Mode Power Supply (SMPS) G G D Uninterruptible Power Supply S High Speed Power Switching S TYPICAL SMPS TOPOLOGIES N-Channel MOSFET Single Transistor Flyback ORDERING INFORMATION 2 2 2 2 Package D PAK (TO-263) D PAK (TO-263) D PAK (TO-263) I PAK (TO-262) a a Lead (Pb)-free and Halogen-free SiHFBC30AS-GE3 SiHFBC30ASTRL-GE3 SiHFBC30ASTRR-GE3 SiHFBC30AL-GE3 a a IRFBC30ASPbF IRFBC30ASTRLPbF IRFBC30ASTRRPbF IRFBC30ALPbF Lead (Pb)-free a a SiHFBC30AS-E3 SiHFBC30ASTL-E3 SiHFBC30ASTR-E3 SiHFBC30AL-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 600 DS V Gate-Source Voltage V 30 GS T = 25 C 3.6 C Continuous Drain Current V at 10 V I GS D T = 100 C 2.3 A C a, e Pulsed Drain Current I 14 DM Linear Derating Factor 0.69 W/C b Single Pulse Avalanche Energy E 290 mJ AS a Avalanche Current I 3.6 A AR a Repetiitive Avalanche Energy E 7.4 mJ AR Maximum Power Dissipation T = 25 C P 74 W C D c, e Peak Diode Recovery dV/dt dV/dt 7.0 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Starting T = 25 C, L = 46 mH, R = 25 , I = 3.6 A (see fig. 12). J g AS c. I 3.6 A, dI/dt 170 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. Uses IRFBC30A/SiHFBC30A data and test conditions. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91109 www.vishay.com S11-1052-Rev. C, 30-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient (PCB R -40 a thJA Mounted, steady-state) C/W Maximum Junction-to-Case (Drain) R -1.7 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = 250 A 600 - - V DS GS D d V Temperature Coefficient V /T Reference to 25 C, I = 1 mA -0.67 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.5 V GS(th) DS GS D Gate-Source Leakage I V = 30 V - - 100 nA GSS GS V = 600 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 480 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 2.2 A -- 2.2 DS(on) GS D Forward Transconductance g V = 50 V, I = 2.2 A 2.1 - - S fs DS D Dynamic Input Capacitance C - 510 - iss V = 0 V, GS Output Capacitance C -7V = 25 V, 0- oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -3.5- rss pF V = 1.0 V, f = 1.0 MHz - 730 - DS Output Capacitance C oss V = 0 V V = 480 V, f = 1.0 MHz - 19 - GS DS c Effective Output Capacitance C eff. V = 0 V to 480 V -31 - oss DS Total Gate Charge Q -- 23 g I = 3.6 A, V = 480 V, D DS Gate-Source Charge Q --V = 10 V 5.4 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --11 gd Turn-On Delay Time t -9.8 - d(on) Rise Time t -13 - r V = 300 V, I = 3.6 A, DD D ns b, d R = 12 , R = 82 , see fig. 10 g D Turn-Off Delay Time t -19- d(off) Fall Time t -12- f Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 3.6 S showing the A G integral reverse a Pulsed Diode Forward Current I -- 14 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = 3.6 A, V = 0 V -- 1.6 V SD J S GS Body Diode Reverse Recovery Time t - 400 600 ns rr b, T = 25 C, I = 3.6 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -1.1 1.7 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. c. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80 % V . oss oss DS DS d. Uses IRFBC30A/SiHFBC30A data and test conditions. www.vishay.com Document Number: 91109 2 S11-1052-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000