IRFB17N50L www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Low gate charge Q results in simple drive g TO-220AB Available Requirement Improved gate, avalanche, and dynamic dV/dt Available ruggedness G Fully characterized capacitance and avalanche voltage and current S D Low t and soft diode recovery rr G S Material categorization: for definitions of compliance N-Channel MOSFET please see www.vishay.com/doc 99912 Note * This datasheet provides information about parts that are PRODUCT SUMMARY RoHS-compliant and / or parts that are non RoHS-compliant. For V (V) 500 example, parts with lead (Pb) terminations are not RoHS-compliant. DS Please see the information / tables in this datasheet for details R ()V = 10 V 0.28 DS(on) GS Q max. (nC) 130 g APPLICATIONS Q (nC) 33 gs Switch mode power supply (SMPS) Q (nC) 59 gd Uninterruptible power supply Configuration Single High speed power switching ZVS and high frequency circuit PWM inverters ORDERING INFORMATION Package TO-220AB Lead (Pb)-free IRFB17N50LPbF ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 500 DS V Gate-source voltage V 30 GS T = 25 C 16 C Continuous drain current V at 10 V I GS D T = 100 C 11 A C a Pulsed drain current I 64 DM Linear derating factor 1.8 W/C b Single pulse avalanche energy E 390 mJ AS a Repetitive avalanche current I 16 A AR a Repetitive avalanche energy E 22 mJ AR Maximum power dissipation T = 25 C P 220 W C D c Peak diode recovery dV/dt dV/dt 13 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) For 10 s 300 10 lbf in Mounting torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Starting T = 25 C, L = 3.0 mH, R = 25 , I = 16 A (see fig. 12) J g AS c. I 16 A, dI/dt 347 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case S21-0340-Rev. C, 12-Apr-2021 Document Number: 91098 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFB17N50L www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -62 thJA Case-to-sink, flat, greased surface R 0.50 - C/W thCS Maximum junction-to-case (drain) R -0.56 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 500 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.6 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 3.0 - 5.0 V GS(th) DS GS D Gate-source leakage I V = 30 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 50 A DS GS Zero gate voltage drain current I DSS V = 400 V, V = 0 V, T = 125 C - - 2.0 mA DS GS J b Drain-source on-state resistance R V = 10 V I = 9.9 A - 0.28 0.32 DS(on) GS D b Forward transconductance g V = 50 V, I = 9.9 A 11 - - S fs DS D Dynamic Input capacitance C - 2760 - iss V = 0 V, GS Output capacitance C -V = 25 V, 325- oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -37- rss pF V = 0 V V = 1.0 V , f = 1.0 MHz - 3690 - GS DS Output capacitance C oss V = 0 V V = 400 V , f = 1.0 MHz - 84 - GS DS c Effective output capacitance C eff. V = 0 V V = 0 V to 400 V - 159 - oss GS DS Total gate charge Q - - 130 g I = 16 A, V = 400 V, D DS Gate-source charge Q --V = 10 V 33 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --59 gd Turn-on delay time t -21 - d(on) Rise time t -51 - r V = 250 V, I = 16 A, DD D ns b R = 7.5 , see fig. 10 g Turn-off delay time t -50- d(off) Fall time t -28- f Gate input resistance R f = 1 MHz, open drain 0.3 - 1.4 g Drain-Source Body Diode Characteristics Continuous source-drain diode current I MOSFET symbol -- 16 S D showing the A integral reverse G a Pulsed diode forward current I -- 64 SM p - n junction diode S b Body diode voltage V T = 25 C, I = 16 A, V = 0 V -- 1.5 V SD J S GS T = 25 C - 170 250 J Body diode reverse recovery time t ns rr T = 125 C - 220 330 J b I = 16 A, dI/dt = 100 A/s F T = 25 C - 470 710 J Body diode reverse recovery charge Q nC rr T = 125 C - 810 1210 J Reverse recovery current I -7.3 11 A RRM Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S21-0340-Rev. C, 12-Apr-2021 Document Number: 91098 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000