IRFB20N50K www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Low gate charge Q results in simple drive g TO-220AB Available requirement Improved gate, avalanche, and dynamic dV/dt Available ruggedness G Fully characterized capacitance and avalanche voltage and current S D Low R DS(on) G S Material categorization: for definitions of compliance N-Channel MOSFET please see www.vishay.com/doc 99912 Note * This datasheet provides information about parts that are PRODUCT SUMMARY RoHS-compliant and / or parts that are non RoHS-compliant. For V (V) 500 example, parts with lead (Pb) terminations are not RoHS-compliant. DS Please see the information / tables in this datasheet for details R ()V = 10 V 0.21 DS(on) GS Q max. (nC) 110 g APPLICATIONS Q (nC) 33 gs Switch mode power supply (SMPS) Q (nC) 54 gd Uninterruptible power supply Configuration Single High speed power switching Hard switched and high frequency circuits ORDERING INFORMATION Package TO-220AB Lead (Pb)-free IRFB20N50KPbF ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 500 DS V Gate-source voltage V 30 GS T = 25 C 20 C Continuous drain current V at 10 V I GS D T = 100 C 12 A C a Pulsed drain current I 80 DM Linear derating factor 2.2 W/C b Single pulse avalanche energy E 330 mJ AS a Repetitive avalanche current I 20 A AR a Repetitive avalanche energy E 28 mJ AR Maximum power dissipation T = 25 C P 280 W C D c Peak diode recovery dV/dt dV/dt 10 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) For 10 s 300 Mounting torque 6-32 or M3 screw 10 N Notes a. Repetitive rating pulse width limited by maximum junction temperature b. Starting T = 25 C, L = 1.6 mH, R = 25 , I = 20 A J g AS c. I 20 A, dI/dt 350 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case S21-0340-Rev. E, 12-Apr-2021 Document Number: 91101 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFB20N50K www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -58 thJA Case-to-sink, flat, greased surface R 0.50 - C/W thCS Maximum junction-to-case (drain) R -0.45 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 500 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.61 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 3.0 - 5.0 V GS(th) DS GS D Gate-source leakage I V = 30 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 50 DS GS Zero gate voltage drain current I A DSS V = 400 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-source on-state resistance R V = 10 V I = 12 A -0.21 0.25 DS(on) GS D Forward transconductance g V = 50 V, I = 12 A 11 - - S fs DS D Dynamic Input capacitance C - 2870 - iss V = 0 V, GS Output capacitance C -V = 25 V, 320- oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -34- rss pF V = 1.0 V, f = 1.0 MHz - 3480 - DS Output capacitance C oss V = 0 V V = 400 V, f = 1.0 MHz - 85 - GS DS Effective output capacitance C eff. V = 0 V to 400 V - 160 - oss DS Total gate charge Q -- 110 g I = 20 A, V = 400 V D DS Gate-source charge Q --V = 10 V 33 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --54 gd Turn-on delay time t -22 - d(on) Rise time t -74 - r V = 250 V, I = 20 A DD D ns b R = 7.5 , V = 10 V, see fig. 10 g GS Turn-off delay time t -45- d(off) Fall time t -33- f Gate input resistance R f = 1 MHz, open drain 0.3 - 2.9 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 20 S showing the A integral reverse G a Pulsed diode forward current I p - n junction diode -- 80 SM S b Body diode voltage V T = 25 C, I = 20 A, V = 0 V -- 1.5 V SD J S GS Body diode reverse recovery time t - 520 780 ns rr b T = 25 C, I = 20 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q -5.3 8.0 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature b. Pulse width 400 s duty cycle 2 % S21-0340-Rev. E, 12-Apr-2021 Document Number: 91101 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000