X-On Electronics has gained recognition as a prominent supplier of IRFB20N50KPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFB20N50KPBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFB20N50KPBF Vishay

IRFB20N50KPBF electronic component of Vishay
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Part No.IRFB20N50KPBF
Manufacturer: Vishay
Category: MOSFETs
Description: N-Channel 500 V 20A (Tc) 280W (Tc) Through Hole TO-220AB
Datasheet: IRFB20N50KPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.85 ea
Line Total: USD 3.85 
Availability - 340
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
340
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 3.85
3 : USD 3.234
8 : USD 2.226
22 : USD 2.1

   
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RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
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Factory Pack Quantity :
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Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IRFB20N50KPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFB20N50KPBF and other electronic components in the MOSFETs category and beyond.

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IRFB20N50K www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Low gate charge Q results in simple drive g TO-220AB Available requirement Improved gate, avalanche, and dynamic dV/dt Available ruggedness G Fully characterized capacitance and avalanche voltage and current S D Low R DS(on) G S Material categorization: for definitions of compliance N-Channel MOSFET please see www.vishay.com/doc 99912 Note * This datasheet provides information about parts that are PRODUCT SUMMARY RoHS-compliant and / or parts that are non RoHS-compliant. For V (V) 500 example, parts with lead (Pb) terminations are not RoHS-compliant. DS Please see the information / tables in this datasheet for details R ()V = 10 V 0.21 DS(on) GS Q max. (nC) 110 g APPLICATIONS Q (nC) 33 gs Switch mode power supply (SMPS) Q (nC) 54 gd Uninterruptible power supply Configuration Single High speed power switching Hard switched and high frequency circuits ORDERING INFORMATION Package TO-220AB Lead (Pb)-free IRFB20N50KPbF ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 500 DS V Gate-source voltage V 30 GS T = 25 C 20 C Continuous drain current V at 10 V I GS D T = 100 C 12 A C a Pulsed drain current I 80 DM Linear derating factor 2.2 W/C b Single pulse avalanche energy E 330 mJ AS a Repetitive avalanche current I 20 A AR a Repetitive avalanche energy E 28 mJ AR Maximum power dissipation T = 25 C P 280 W C D c Peak diode recovery dV/dt dV/dt 10 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) For 10 s 300 Mounting torque 6-32 or M3 screw 10 N Notes a. Repetitive rating pulse width limited by maximum junction temperature b. Starting T = 25 C, L = 1.6 mH, R = 25 , I = 20 A J g AS c. I 20 A, dI/dt 350 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case S21-0340-Rev. E, 12-Apr-2021 Document Number: 91101 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFB20N50K www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -58 thJA Case-to-sink, flat, greased surface R 0.50 - C/W thCS Maximum junction-to-case (drain) R -0.45 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 500 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.61 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 3.0 - 5.0 V GS(th) DS GS D Gate-source leakage I V = 30 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 50 DS GS Zero gate voltage drain current I A DSS V = 400 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-source on-state resistance R V = 10 V I = 12 A -0.21 0.25 DS(on) GS D Forward transconductance g V = 50 V, I = 12 A 11 - - S fs DS D Dynamic Input capacitance C - 2870 - iss V = 0 V, GS Output capacitance C -V = 25 V, 320- oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -34- rss pF V = 1.0 V, f = 1.0 MHz - 3480 - DS Output capacitance C oss V = 0 V V = 400 V, f = 1.0 MHz - 85 - GS DS Effective output capacitance C eff. V = 0 V to 400 V - 160 - oss DS Total gate charge Q -- 110 g I = 20 A, V = 400 V D DS Gate-source charge Q --V = 10 V 33 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --54 gd Turn-on delay time t -22 - d(on) Rise time t -74 - r V = 250 V, I = 20 A DD D ns b R = 7.5 , V = 10 V, see fig. 10 g GS Turn-off delay time t -45- d(off) Fall time t -33- f Gate input resistance R f = 1 MHz, open drain 0.3 - 2.9 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 20 S showing the A integral reverse G a Pulsed diode forward current I p - n junction diode -- 80 SM S b Body diode voltage V T = 25 C, I = 20 A, V = 0 V -- 1.5 V SD J S GS Body diode reverse recovery time t - 520 780 ns rr b T = 25 C, I = 20 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q -5.3 8.0 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature b. Pulse width 400 s duty cycle 2 % S21-0340-Rev. E, 12-Apr-2021 Document Number: 91101 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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