IRFB13N50A www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Lower gate charge Q results in simpler drive g TO-220AB Available requirements Improved gate, avalanche, and dynamic dV/dt Available ruggedness G Fully characterized capacitance and avalanche voltage S D Material categorization: for definitions of compliance G S please see www.vishay.com/doc 99912 N-Channel MOSFET Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. PRODUCT SUMMARY Please see the information / tables in this datasheet for details V (V) 500 DS R ()V = 10 V 0.450 DS(on) GS APPLICATIONS Q max. (nC) 81 g Switch mode power supply (SMPS) Q (nC) 20 gs Uninterruptible power supplies Q (nC) 36 gd High speed power switching Configuration Single ORDERING INFORMATION Package TO-220AB Lead (Pb)-free IRFB13N50APbF ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 500 DS V Gate-source voltage V 30 GS T = 25 C 14 C Continuous drain current V at 10 V I GS D T = 100 C 9.1 A C a Pulsed drain current I 56 DM Linear derating factor 2.0 W/C b Single pulse avalanche energy E 560 mJ AS a Repetitive avalanche current I 14 A AR a Repetitive avalanche energy E 25 mJ AR Maximum power dissipation T = 25 C P 250 W C D c Peak diode recovery dV/dt dV/dt 9.2 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) For 10 s 300 10 lbf in Mounting torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Starting T = 25 C, L = 5.7 mH, R = 25 , I =14 A, dV/dt = 7.6 V/ns (see fig. 12a) J g AS c. I 14 A, dI/dt 250 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case S21-0340-Rev. C, 12-Apr-2021 Document Number: 91095 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFB13N50A www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -62 thJA Case-to-sink, flat, greased surface R 0.50 - C/W thCS Maximum junction-to-case (drain) R -0.50 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 500 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.55 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-source leakage I V = 30 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 400 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-source on-state resistance R V = 10 V I = 8.4 A - - 0.450 DS(on) GS D Forward transconductance g V = 50 V, I = 8.4 A 8.1 - - S fs DS D Dynamic Input capacitance C - 1910 - iss V = 0 V, GS Output capacitance C -V = 25 V, 290- oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -11- rss pF V = 1.0 V, f = 1.0 MHz - 2730 - DS Output capacitance C oss V = 0 V V = 400 V, f = 1.0 MHz - 82 - GS DS c Effective output capacitance C eff. V = 0 V to 400 V - 160 - oss DS Total gate charge Q -- 81 g I = 14 A, V = 400 V, D DS Gate-source charge Q --20 nC gs b see fig. 6 and 13 Gate-drain charge Q --36 gd Turn-on delay time t V = 10 V -15 - d(on) GS V = 250 V, I = 14 A, DD D Rise time t -39 - r R = 7.5 , ns g Turn-off delay time t -3b9- d(off) see fig. 10 Fall time t -31- f Gate input resistance R f = 1 MHz, open drain 0.5 - 2.1 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 14 S showing the A G integral reverse a Pulsed diode forward current I -- 56 SM S p - n junction diode b Body diode voltage V T = 25 C, I = 14 A, V = 0 V -- 1.5 V SD J S GS Body diode reverse recovery time t - 370 550 ns rr T = 25 C, I = 14 A, J F Body diode reverse recovery charge Q -4.4 6.5 C rr b T = 125 C, dI/dt = 100 A/s J Body diode reverse recovery current I -21 31 A RRM Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % c. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V oss oss DS DS S21-0340-Rev. C, 12-Apr-2021 Document Number: 91095 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000