X-On Electronics has gained recognition as a prominent supplier of IPP80N03S4L03AKSA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPP80N03S4L03AKSA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPP80N03S4L03AKSA1 Infineon

IPP80N03S4L03AKSA1 electronic component of Infineon
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Part No.IPP80N03S4L03AKSA1
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET N-Ch 30V 80A TO220-3 OptiMOS-T2
Datasheet: IPP80N03S4L03AKSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.036 ea
Line Total: USD 3.04 
Availability - 65
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9
Ship by Fri. 22 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 4.0739
10 : USD 3.9786
30 : USD 3.9157
100 : USD 3.8507

65
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 3.036
10 : USD 2.5415
100 : USD 1.725
250 : USD 1.7135
500 : USD 1.472

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Series
Brand
Configuration
Height
Length
Transistor Type
Width
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IPP80N03S4L03AKSA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPP80N03S4L03AKSA1 and other electronic components in the MOSFETs category and beyond.

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IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R (SMD version) 2.4 m DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB80N03S4L-02 PG-TO263-3-2 4N03L02 IPI80N03S4L-03 PG-TO262-3-1 4N03L03 IPP80N03S4L-03 PG-TO220-3-1 4N03L03 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 1) I T =25 C, V =10 V 80 A Continuous drain current D C GS T =100 C, C 80 2) V =10 V GS 2) I T =25 C 320 Pulsed drain current D,pulse C E I =80 A Avalanche energy, single pulse 260 mJ AS D I T =25 C Avalanche current, single pulse 80 A AS C Gate source voltage V 16 V GS Power dissipation P T =25 C 136 W tot C T , T Operating and storage temperature -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 Rev. 2.0 page 1 2007-03-09IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03 Parameter Symbol Conditions Values Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R - - 1.1 K/W thJC Thermal resistance, junction - R -- 62 thJA ambient, leaded R SMD version, device on PCB minimal footprint - - 62 thJA 2 3) -- 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I = 1 mA Drain-source breakdown voltage 30 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =90 A 1.0 1.5 2.2 GS(th) DS GS D V =30 V, V =0 V, DS GS I Zero gate voltage drain current - 0.01 1 A DSS T =25 C j V =30 V, V =0 V, DS GS - 10 1000 2) T =125 C j V =18 V, V =0 V, DS GS -5 60 2) T =85 C j Gate-source leakage current I V =16 V, V =0 V - 1 100 nA GSS GS DS R V =4.5 V, I =40 A Drain-source on-state resistance - 2.8 3.2 m DS(on) GS D V =4.5 V, I =40 A, GS D - 2.5 2.9 SMD version V =10 V, I =80 A - 2.3 2.7 GS D V =10 V, I =80 A, GS D - 2.0 2.4 SMD version Rev. 2.0 page 2 2007-03-09

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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