X-On Electronics has gained recognition as a prominent supplier of IRF9Z34NSTRRPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF9Z34NSTRRPBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF9Z34NSTRRPBF Infineon

Name: IRF9Z34NSTRRPBF
Brand: Infineon
SKU: IRF9Z34NSTRRPBF_Infineon
Availability: OutOfStock
Rating: 5 (11 reviews)

IRF9Z34NSTRRPBF electronic component of Infineon

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Part No.	IRF9Z34NSTRRPBF
Manufacturer:	Infineon
Category:	MOSFETs
Description:	International Rectifier MOSFET 1 P-CH -55V HEXFET 100mOhms 23.3nC
Datasheet:	IRF9Z34NSTRRPBF Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 1.1908 ea
Line Total: USD 1.19

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

IRF9Z34NSTRRPBF More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Mon. 30 Dec to Fri. 03 Jan MOQ : 1 Multiples : 1	1 : USD 2.6277

0 Ship by Mon. 30 Dec to Fri. 03 Jan MOQ : 1 Multiples : 1	1 : USD 2.6277

0 Ship by Mon. 30 Dec to Fri. 03 Jan MOQ : 800 Multiples : 800	800 : USD 0.4892 1600 : USD 0.4715 2400 : USD 0.4656

0 Ship by Mon. 30 Dec to Fri. 03 Jan MOQ : 1600 Multiples : 1600	1600 : USD 0.429

0 Ship by Thu. 26 Dec to Mon. 30 Dec MOQ : 1 Multiples : 1	1 : USD 3.66 10 : USD 1.3725 100 : USD 1.0217 500 : USD 0.8449

0 Ship by Thu. 26 Dec to Mon. 30 Dec MOQ : 1 Multiples : 1	1 : USD 1.1908 5 : USD 0.7678 25 : USD 0.6784 27 : USD 0.5916 73 : USD 0.5602

0 Ship by Mon. 30 Dec to Fri. 03 Jan MOQ : 800 Multiples : 800	800 : USD 0.3698

0 Ship by Mon. 30 Dec to Fri. 03 Jan MOQ : 800 Multiples : 800	800 : USD 0.4144

We are delighted to provide the IRF9Z34NSTRRPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF9Z34NSTRRPBF and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The IRF9Z34NSTRRPBF is an N-Channel MOSFET manufactured by Infineon Technologies. It is a vertical transistor with a breakdown voltage of 34V and a drain source voltage rating of 30V. It has a maximum drain current rating of 62A, a gate threshold voltage of 4V, and a maximum power dissipation rating of 254W. The IRF9Z34NSTRRPBF is suitable for use in high speed switching applications and in automotive, consumer, and industrial applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

CYP may also be referenced as

Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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Manufacturer Infineon Infineon
Product Category MOSFETs MOSFETs
RoHS - XON Y Y
Id - Continuous Drain Current 19 A 19 A
Vds - Drain-Source Breakdown Voltage - 55 V - 55 V
Rds On - Drain-Source Resistance 100 mOhms 100 mOhms
Transistor Polarity P - Channel P - Channel
Vgs - Gate-Source Breakdown Voltage 20 V 20 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 175 C + 175 C
Pd - Power Dissipation 68 W 68 W
Mounting Style Smd/Smt Smd/Smt
Package / Case D - PAK - 3 D - PAK - 3
Packaging Reel Reel
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 20 V 20 V
Qg - Gate Charge 23.3 nC 23.3 nC
Channel Mode Enhancement Enhancement
Configuration Single Single
Brand Infineon Infineon
Fall Time 41 ns 41 ns
Rise Time 55 ns 55 ns
Factory Pack Quantity : 800 800
Typical Turn-Off Delay Time 30 ns 30 ns
Height 2.3 mm 2.3 mm
Length 6.5 mm 6.5 mm
Transistor Type 1 P - Channel 1 P - Channel
Type Hexfet Power Mosfet Hexfet Power Mosfet
Width 6.22 mm 6.22 mm
Cnhts 8541290000 8541290000
Hts Code 8541290095 8541290095
Mxhts 85412999 85412999
Product Type Mosfet Mosfet
Subcategory Mosfets Mosfets
Taric 8541290000 8541290000
Typical Turn-On Delay Time 13 ns 13 ns