MOSFET
Applications
HEXFET Power MOSFET
High Frequency DC-DC converters
Lead-Free
V R max I
DSS DS(on) D
200V 0.082 31A
Low Gate to Drain to Reduce Switching
Losses
Fully Characterized Capacitance Including
Effective COSS to Simplify Design,(See
AN 1001)
Fully Characterized Avalanche Voltage
and Current
2
TO-220AB D Pak TO-262
IRFSL31N20DPbF
IRFB31N20DPbF IRFS31N20DPbF
Parameter Max. Units
I @ T = 25C Continuous Drain Current, V @ 10V 31
D C GS
I @ T = 100C Continuous Drain Current, V @ 10V 21 A
D C GS
I Pulsed Drain Current 124
DM
P @T = 25C Power Dissipation 3.1 W
D A
P @T = 25C Power Dissipation 200
D C
Linear Derating Factor 1.3 W/C
V Gate-to-Source Voltage 30 V
GS
dv/dt Peak Diode Recovery dv/dt 2.1 V/ns
T Operating Junction and -55 to + 175
J
T Storage Temperature Range
STG C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw 10 lbfin (1.1Nm)
Telecom 48V Input DC/DC Active Clamp Reset Forward Converter
Notesthrough are on page 11
www.irf.com 1
IRFB/S/SL31N20DPbF
Static @ T = 25C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
V Drain-to-Source Breakdown Voltage 200 V V = 0V, I = 250A
(BR)DSS GS D
V /T Breakdown Voltage Temp. Coefficient 0.25 V/C Reference to 25C, I = 1mA
(BR)DSS J
D
R Static Drain-to-Source On-Resistance 0.082 V = 10V, I = 18A
DS(on) GS D
V Gate Threshold Voltage 3.0 5.5 V V = V , I = 250A
GS(th) DS GS D
25 V = 200V, V = 0V
DS GS
I Drain-to-Source Leakage Current A
DSS
250 V = 160V, V = 0V, T = 150C
DS GS J
Gate-to-Source Forward Leakage 100 V = 30V
GS
I nA
GSS
Gate-to-Source Reverse Leakage -100 V = -30V
GS
Dynamic @ T = 25C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
g Forward Transconductance 17 S V = 50V, I = 18A
fs DS D
Q Total Gate Charge 70 107 I = 18A
g D
Q Gate-to-Source Charge 18 23 nC V = 160V
gs DS
Q Gate-to-Drain Mille) Charge 33 65 V = 10V
gd GS
t Turn-On Delay Time 16 V = 100V
d(on) DD
t Rise Time 38 I = 18A
r D
ns
t Turn-Off Delay Time 26 R = 2.5
d(off) G
t Fall Time 10 R = 5.4,
f D
C Input Capacitance 2370 V = 0V
iss GS
C Output Capacitance 390 V = 25V
oss DS
C Reverse Transfer Capacitance 78 pF = 1.0MHz
rss
C Output Capacitance 2860 V = 0V, V = 1.0V, = 1.0MHz
oss GS DS
C Output Capacitance 150 V = 0V, V = 160V, = 1.0MHz
oss GS DS
C eff. Effective Output Capacitance 170 V = 0V, V = 0V to 160V
oss GS DS
Avalanche Characteristics
Parameter Typ. Max. Units
E Single Pulse Avalanche Energy 420 mJ
AS
I Avalanche Current 18 A
AR
E Repetitive Avalanche Energy 20 mJ
AR
Thermal Resistance
Parameter Typ. Max. Units
R Junction-to-Case 0.75
JC
R Case-to-Sink, Flat, Greased Surface 0.50 C/W
CS
R Junction-to-Ambient 62
JA
R Junction-to-Ambient 40
JA
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
D
I Continuous Source Current MOSFET symbol
S
31
(Body Diode) showing the
G
I Pulsed Source Current integral reverse
SM
124
S
(Body Diode) p-n junction diode.
V Diode Forward Voltage 1.3 V T = 25C, I = 18A, V = 0V
SD J S GS
t Reverse Recovery Time 200 300 ns T = 25C, I = 18A
rr J F
Q Reverse RecoveryCharge 1.7 2.6 C di/dt = 100A/s
rr
t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L )
on S D
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