X-On Electronics has gained recognition as a prominent supplier of IRFB31N20D MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFB31N20D MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFB31N20D Infineon

IRFB31N20D electronic component of Infineon
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See Product Specifications
Part No.IRFB31N20D
Manufacturer: Infineon
Category: MOSFETs
Description: IRFB31N20D HEX/MOS N-CH 200V 31A TO-220AB
Datasheet: IRFB31N20D Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.5343 ea
Line Total: USD 4.53 
Availability - 7
Ship by Tue. 24 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7
Ship by Tue. 24 Dec
MOQ : 1
Multiples : 1
1 : USD 4.5343
25 : USD 2.2671
50 : USD 2.0404
75 : USD 1.7004
100 : USD 1.5303

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IRFB31N20D from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFB31N20D and other electronic components in the MOSFETs category and beyond.

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      MOSFET        Applications HEXFET Power MOSFET  High Frequency DC-DC converters  Lead-Free V R max I DSS DS(on) D 200V 0.082 31A   Low Gate to Drain to Reduce Switching Losses  Fully Characterized Capacitance Including Effective COSS to Simplify Design,(See AN 1001) Fully Characterized Avalanche Voltage and Current 2 TO-220AB D Pak TO-262 IRFSL31N20DPbF IRFB31N20DPbF IRFS31N20DPbF      Parameter Max. Units I @ T = 25C Continuous Drain Current, V @ 10V 31 D C GS I @ T = 100C Continuous Drain Current, V @ 10V 21 A D C GS I Pulsed Drain Current  124 DM P @T = 25C Power Dissipation  3.1 W D A P @T = 25C Power Dissipation 200 D C Linear Derating Factor 1.3 W/C V Gate-to-Source Voltage 30 V GS dv/dt Peak Diode Recovery dv/dt  2.1 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torqe, 6-32 or M3 screw 10 lbfin (1.1Nm)      Telecom 48V Input DC/DC Active Clamp Reset Forward Converter Notesthrough are on page 11 www.irf.com 1 IRFB/S/SL31N20DPbF Static @ T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 200 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.25 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 0.082 V = 10V, I = 18A DS(on) GS D V Gate Threshold Voltage 3.0 5.5 V V = V , I = 250A GS(th) DS GS D 25 V = 200V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 160V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 30V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -30V GS Dynamic @ T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions g Forward Transconductance 17 S V = 50V, I = 18A fs DS D Q Total Gate Charge 70 107 I = 18A g D Q Gate-to-Source Charge 18 23 nC V = 160V gs DS Q Gate-to-Drain Mille) Charge 33 65 V = 10V  gd GS t Turn-On Delay Time 16 V = 100V d(on) DD t Rise Time 38 I = 18A r D ns t Turn-Off Delay Time 26 R = 2.5 d(off) G t Fall Time 10 R = 5.4, f D C Input Capacitance 2370 V = 0V iss GS C Output Capacitance 390 V = 25V oss DS C Reverse Transfer Capacitance 78 pF = 1.0MHz rss C Output Capacitance 2860 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 150 V = 0V, V = 160V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 170 V = 0V, V = 0V to 160V  oss GS DS Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 420 mJ AS I Avalanche Current 18 A AR E Repetitive Avalanche Energy 20 mJ AR Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.75 JC R Case-to-Sink, Flat, Greased Surface  0.50 C/W CS R Junction-to-Ambient 62 JA R Junction-to-Ambient 40 JA Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 31 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 124 S (Body Diode)  p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 18A, V = 0V SD J S GS t Reverse Recovery Time 200 300 ns T = 25C, I = 18A rr J F Q Reverse RecoveryCharge 1.7 2.6 C di/dt = 100A/s  rr  t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D 2 www.irf.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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