IRF9540S, SiHF9540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition V (V) - 100 DS Surface Mount R ( )V = - 10 V 0.20 DS(on) GS Available in Tape and Reel Q (Max.) (nC) 61 Dynamic dV/dt Rating g Repetitive Avalanche Rated Q (nC) 14 gs P-Channel Q (nC) 29 gd 175 C Operating Temperature Fast Switching Configuration Single Compliant to RoHS Directive 2002/95/EC S DESCRIPTION Third generation Power MOSFETs from Vishay provide the 2 D PAK (TO-263) designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. 2 The D PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest D possible on-resistance in any existing surface mount G D 2 package. The D PAK (TO-263) is suitable for high current S P-Channel MOSFET applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. ORDERING INFORMATION 2 2 Package D PAK (TO-263) D PAK (TO-263) a Lead (Pb)-free and Halogen-freeSiHF9540S-GE3 SiHF9540STRL-GE3 a IRF9540SPbF IRF9540STRLPbF Lead (Pb)-free a SiHF9540S-E3 SiHF9540STL-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V - 100 DS V Gate-Source Voltage V 20 GS T = 25 C - 19 C Continuous Drain Current V at - 10 V I GS D T = 100 C - 13 A C a Pulsed Drain Current I - 72 DM Linear Derating Factor 1.0 W/C e Linear Derating Factor (PCB Mount) 0.025 b Single Pulse Avalanche Energy E 640 mJ AS a Repetitive Avalanche Current I - 19 A AR a Repetitive Avalanche Energy E 15 mJ AR Maximum Power Dissipation 150 T = 25 C P W C D e Maximum Power Dissipation (PCB Mount) 3.7 c Peak Diode Recovery dV/dt dV/dt - 5.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 175 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = - 25 V, starting T = 25 C, L = 2.7 mH, R = 25 , I = - 19 A (see fig. 12). DD J g AS c. I - 19 A, dI/dt 200 A/s, V V , T 175 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material) * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91079 www.vishay.com S11-1051-Rev. C, 30-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRF9540S, SiHF9540S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL MIN. TYP. MAX. UNIT Maximum Junction-to-Ambient R -- 40 thJA a (PCB Mount) C/W Maximum Junction-to-Case (Drain) R -- 1.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = - 250 A - 100 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = - 1 mA - - 0.087 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = - 250 A - 2.0 - - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = - 100 V, V = 0 V - - - 100 DS GS Zero Gate Voltage Drain Current I A DSS V = - 80 V, V = 0 V, T = 150 C - - - 500 DS GS J b Drain-Source On-State Resistance R V = - 10 V I = - 11 A - - 0.20 DS(on) GS D Forward Transconductance g V = - 50 V, I = - 11 A 6.2 - - S fs DS D Dynamic Input Capacitance C - 1400 - iss V = 0 V, GS Output Capacitance C -V = - 25 V, 590- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -140- rss Total Gate Charge Q -- 61 g I = - 19 A, V = - 80 V, D DS Gate-Source Charge Q --V = - 10 V 14 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --29 gd Turn-On Delay Time t -16 - d(on) Rise Time t -73 - r V = - 50 V, I = - 19 A, DD D ns b R = 9.1 , R = 2.4 , see fig. 10 G D Turn-Off Delay Time t -34- d(off) Fall Time t -57- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L -7.5 - S die contact S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- - 19 S showing the A integral reverse G a Pulsed Diode Forward Current I p - n junction diode -- - 72 SM S b Body Diode Voltage V T = 25 C, I = - 19 A, V = 0 V -- - 5.0 V SD J S GS Body Diode Reverse Recovery Time t - 130 260 ns rr b T = 25 C, I = - 19 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 0.35 0.70 nC rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91079 2 S11-1051-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000