MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPP60R190P6 Data Sheet Rev. 2.0 Final Power Management & Multimarket600V CoolMOS P6 Power Transistor IPP60R190P6 TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS P6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler. Features Increased MOSFET dv/dt ruggedness Drain Extremely low losses due to very low FOM Rdson*Qg and Eoss Pin 2, tab Very high commutation ruggedness Easy to use/drive Pb-free plating, Halogen free mold compound Gate Pin 1 Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22) Source Pin 3 Applications PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit VDS Tj,max 650 V R 190 m DS(on),max Q 37 nC g.typ I 57 A D,pulse E 400V 4.9 J oss Body diode di/dt 500 A/s Type / Ordering Code Package Marking Related Links IPP60R190P6 PG-TO 220 6R190P6 see Appendix A Final Data Sheet 2 Rev. 2.0, 2013-06-07