IRF8513PbF
HEXFET Power MOSFET
Applications
V I
R max
DSS D
DS(on)
Dual SO-8 MOSFET for POL
Converters in Notebook Computers, Servers,
15.5m @V = 10V
Q1 8.0A
GS
Graphics Cards, Game Consoles 30V
12.7m @V = 10V
Q2 11A
GS
and Set-Top Box
Benefits
Low Gate Charge and Low R
DS(on)
Fully Characterized Avalanche Voltage
and Current
20V V Max. Gate Rating
GS
100% Tested for R
G
Lead-Free (Qualified to 260C Reflow)
RoHS Compliant (Halogen Free)
SO-8
Description
The IRF8513PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard
SO-8 package. The IRF8513PbF has been optimized for parameters that are critical in synchronous buck operation
including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make
this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook
and Netcom applications.
Absolute Maximum Ratings
Parameter Q1 Max. Q2 Max. Units
V
Drain-to-Source Voltage 30
DS
V
V
Gate-to-Source Voltage 20
GS
I @ T = 25C Continuous Drain Current, V @ 10V
8.0 11
D A GS
I @ T = 70C Continuous Drain Current, V @ 10V
6.2 9.0 A
D A GS
Pulsed Drain Current
I
64 88
DM
P @T = 25C Power Dissipation 1.5 2.4
D A
W
P @T = 70C
Power Dissipation 1.05 1.68
D A
Linear Derating Factor 0.01 0.02 W/C
T
Operating Junction and
J
-55 to + 175 C
T
Storage Temperature Range
STG
Thermal Resistance
Parameter Q1 Max. Q2 Max. Units
Junction-to-Drain Lead
R
42 42
JL
C/W
R 100 62.5
JA Junction-to-Ambient
Notes through are on page 11
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
www.irf.com 1
11/05/08
Static @ T = 25C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
V = 0V, I = 250A
BV Drain-to-Source Breakdown Voltage Q1&Q2 30 V
DSS GS D
V /T Breakdown Voltage Temp. Coefficient Q1 0.021
DSS J
V/C Reference to 25C, I = 1mA
D
Q2 0.021
V = 10V, I = 8.0A
Q1 12.5 15.5 GS D
R V = 4.5V, I = 6.4A
Static Drain-to-Source On-Resistance 18.1 22.2
DS(on) GS D
m
V = 10V, I = 11A
Q2 10.2 12.7
GS D
V = 4.5V, I = 8.6A
14.2 16.9
GS D
V Q1: V = V , I = 25A
Gate Threshold Voltage Q1&Q2 1.35 1.8 2.35 V DS GS D
GS(th)
Q2: V = V , I = 25A
V /T Gate Threshold Voltage Coefficient Q1 -6.5 DS GS D
GS(th) J
mV/C
Q2 -6.9
V = 24V, V = 0V
I Drain-to-Source Leakage Current Q1&Q2 1.0
DS GS
DSS
A
Q1&Q2 150 V = 24V, V = 0V, T = 125C
DS GS J
V = 20V
I Gate-to-Source Forward Leakage Q1&Q2 100 GS
GSS
nA
V = -20V
Gate-to-Source Reverse Leakage Q1&Q2 -100 GS
V = 15V, I = 6.4A
gfs Forward Transconductance Q1 19
DS D
S
V = 15V, I = 8.6A
Q2 24
DS D
Q Total Gate Charge Q1 5.7 8.6
g
Q2 7.6 11.4
Q Pre-Vth Gate-to-Source Charge Q1 1.2 Q1
gs1
Q2 1.7 V = 15V
DS
Q Post-Vth Gate-to-Source Charge Q1 0.68 V = 4.5V, I = 6.4A
gs2 GS D
Q2 1.0
nC
Q Gate-to-Drain Charge Q1 2.2 Q2
gd
Q2 3.1 V = 15V
DS
Q Gate Charge Overdrive Q1 1.6 V = 4.5V, I = 8.6A
godr GS D
Q2 1.9
Q Switch Charge (Q + Q ) Q1 2.9 See Fig. 31a &31b
sw gs2 gd
Q2 4.0
V = 16V, V = 0V
Q Output Charge Q1 3.9 DS GS
oss
nC
Q2 5.2
R Gate Resistance Q1 2.1 3.2
G
Q2 1.4 3.1
t Turn-On Delay Time Q1 8.0 Q1
d(on)
V = 15V, V = 4.5V
Q2 8.9 DD GS
t Rise Time Q1 8.5 I = 6.4A
r D
Q2 10.7 R = 1.8 See Fig.30a & 30b
G
ns
t Turn-Off Delay Time Q1 8.8 Q2
d(off)
V = 15V, V = 4.5V
Q2 9.3 DD GS
t Fall Time Q1 5.7 I = 8.6A
f D
Q2 5.0 RG = 1.8W
C Input Capacitance Q1 766
iss
Q2 1024 V = 0V
GS
V = 15V
C Output Capacitance Q1 172 DS
oss
pF
Q2 238 = 1.0MHz
C Reverse Transfer Capacitance Q1 83
rss
Q2 116
Avalanche Characteristics
Parameter Typ. Q1 Max. Q2 Max. Units
E
Single Pulse Avalanche Energy 49 70 mJ
AS
I
Avalanche Current 6.4 8.6 A
AR
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
I Continuous Source Current Q1 1.9 MOSFET symbol
S
A
(Body Diode) Q2 3.0 showing the
I Pulsed Source Current Q1 64 integral reverse
SM
A
(Body Diode) Q2 88 p-n junction diode.
T = 25C, I = 6.4A, V = 0V
V Diode Forward Voltage Q1 1.0 J S GS
SD
V
T = 25C, I = 8.6A, V = 0V
Q2 1.0 J S GS
Q1 T = 25C, I = 6.4A,
t Reverse Recovery Time Q1 15 23
J F
rr
ns
V = 15V, di/dt = 100A/s
Q2 17 26
DD
Q2 T = 25C, I = 8.6A,
Q Reverse Recovery Charge Q1 7.2 11
J F
rr
nC
Q2 9.3 14 VDD = 15V, di/dt = 100A/s
t Intrinsic turn -on time is negligible (turn -on is dominated by LS+LD)
Forward Trun-On Time
on
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