IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition V (V) 500 DS Ultra Low Gate Charge R ( )V = 10 V 0.85 DS(on) GS Reduced Gate Drive Requirement Q (Max.) (nC) 39 Enhanced 30 V V Rating g GS Reduced C , C , C iss oss rss Q (nC) 10 gs Extremely High Frequency Operation Q (nC) 19 gd Repetitive Avalanche Rated Compliant to RoHS Directive 2002/95/EC Configuration Single DESCRIPTION D This new series of low charge Power MOSFETs achieve 2 2 significantly lower gate charge then conventional Power D PAK (TO-263) I PAK (TO-262) MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings. In G G D addition, reduced switching losses and improved efficiency S D S are achievable in a variety of high frequency applications. G Frequencies of a few MHz at high current are possible using the new low charge Power MOSFETs. S These device improvements combined with the proven N-Channel MOSFET ruggedness and reliability that characterize Power MOSFETs offer the designer a new power transistor standard for switching applications. ORDERING INFORMATION 2 2 Package D PAK (TO-263) I PAK (TO-262) Lead (Pb)-free and Halogen-free SiHF840LCS-GE3 SiHF840LCL-GE3 IRF840LCSPbF IRF840LCLPbF Lead (Pb)-free SiHF840LCS-E3 SiHF840LCL-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 500 DS V Gate-Source Voltage V 30 GS = 25 C 8.0 T C Continuous Drain Current V at 10 V I GS D T = 100 C 5.1 A C a, e Pulsed Drain Current I 28 DM Linear Derating Factor 1.0 W/C b, e Single Pulse Avalanche Energy E 510 mJ AS a Avalanche Current I 8.0 A AR a Repetiitive Avalanche Energy E 13 mJ AR T = 25 C 125 C Maximum Power Dissipation P W D T = 25 C 3.1 A c, e Peak Diode Recovery dV/dt dV/dt 3.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Starting T = 25 C, L = 14 mH, R = 25 , I = 8.0 A (see fig. 12). J g AS c. I 8.0 A, dI/dt 100 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. Uses IRF840LC, SiHF840LC data and test conditions. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91068 www.vishay.com S11-1050-Rev. C, 30-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -40 a thJA (PCB Mounted, Steady-State) C/W Maximum Junction-to-Case (Drain) R -1.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = 250 A 500 - - V DS GS D c V Temperature Coefficient V /T Reference to 25 C, I = 1 mA -0.63 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 400 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 4.8 A - - 0.85 DS(on) GS D b Forward Transconductance g V = 50 V, I = 4.8 A 4.0 - - S fs DS D Dynamic Input Capacitance C - 1100 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 170- pF oss DS c f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -18- rss Total Gate Charge Q -- 39 g I = 8.0 A, V = 400 V, D DS Gate-Source Charge Q --V = 10 V 10 nC gs GS b, c see fig. 6 and 13 Gate-Drain Charge Q --19 gd Turn-On Delay Time t -12 - d(on) Rise Time t -25 - r V = 250 V, I = 8.0 A, DD D ns b, c R = 9.1 , R = 30 , see fig. 10 g D Turn-Off Delay Time t -27- d(off) Fall Time t -19- f Drain-Source Body Diode Characteristics MOSFET symbol Continuous Source-Drain Diode Current I D -- 8.0 S showing the A integral reverse G a Pulsed Diode Forward Current I -- 28 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = 8.0 A, V = 0 V -- 2.0 V SD J S GS Body Diode Reverse Recovery Time t - 490 740 ns rr b, c T = 25 C, I = 8.0 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -3.0 4.5 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. c. Uses SiHF840LC data and test conditions. www.vishay.com Document Number: 91068 2 S11-1050-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000