X-On Electronics has gained recognition as a prominent supplier of IRF840LCLPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF840LCLPBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF840LCLPBF Vishay

IRF840LCLPBF electronic component of Vishay
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Part No.IRF840LCLPBF
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET N-Chan 500V 8.0 Amp
Datasheet: IRF840LCLPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.2885 ea
Line Total: USD 2.29 
Availability - 857
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
857
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 2.2885
25 : USD 1.656
100 : USD 1.5295
1000 : USD 1.518

   
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We are delighted to provide the IRF840LCLPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF840LCLPBF and other electronic components in the MOSFETs category and beyond.

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IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition V (V) 500 DS Ultra Low Gate Charge R ( )V = 10 V 0.85 DS(on) GS Reduced Gate Drive Requirement Q (Max.) (nC) 39 Enhanced 30 V V Rating g GS Reduced C , C , C iss oss rss Q (nC) 10 gs Extremely High Frequency Operation Q (nC) 19 gd Repetitive Avalanche Rated Compliant to RoHS Directive 2002/95/EC Configuration Single DESCRIPTION D This new series of low charge Power MOSFETs achieve 2 2 significantly lower gate charge then conventional Power D PAK (TO-263) I PAK (TO-262) MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings. In G G D addition, reduced switching losses and improved efficiency S D S are achievable in a variety of high frequency applications. G Frequencies of a few MHz at high current are possible using the new low charge Power MOSFETs. S These device improvements combined with the proven N-Channel MOSFET ruggedness and reliability that characterize Power MOSFETs offer the designer a new power transistor standard for switching applications. ORDERING INFORMATION 2 2 Package D PAK (TO-263) I PAK (TO-262) Lead (Pb)-free and Halogen-free SiHF840LCS-GE3 SiHF840LCL-GE3 IRF840LCSPbF IRF840LCLPbF Lead (Pb)-free SiHF840LCS-E3 SiHF840LCL-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 500 DS V Gate-Source Voltage V 30 GS = 25 C 8.0 T C Continuous Drain Current V at 10 V I GS D T = 100 C 5.1 A C a, e Pulsed Drain Current I 28 DM Linear Derating Factor 1.0 W/C b, e Single Pulse Avalanche Energy E 510 mJ AS a Avalanche Current I 8.0 A AR a Repetiitive Avalanche Energy E 13 mJ AR T = 25 C 125 C Maximum Power Dissipation P W D T = 25 C 3.1 A c, e Peak Diode Recovery dV/dt dV/dt 3.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Starting T = 25 C, L = 14 mH, R = 25 , I = 8.0 A (see fig. 12). J g AS c. I 8.0 A, dI/dt 100 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. Uses IRF840LC, SiHF840LC data and test conditions. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91068 www.vishay.com S11-1050-Rev. C, 30-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -40 a thJA (PCB Mounted, Steady-State) C/W Maximum Junction-to-Case (Drain) R -1.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = 250 A 500 - - V DS GS D c V Temperature Coefficient V /T Reference to 25 C, I = 1 mA -0.63 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 400 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 4.8 A - - 0.85 DS(on) GS D b Forward Transconductance g V = 50 V, I = 4.8 A 4.0 - - S fs DS D Dynamic Input Capacitance C - 1100 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 170- pF oss DS c f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -18- rss Total Gate Charge Q -- 39 g I = 8.0 A, V = 400 V, D DS Gate-Source Charge Q --V = 10 V 10 nC gs GS b, c see fig. 6 and 13 Gate-Drain Charge Q --19 gd Turn-On Delay Time t -12 - d(on) Rise Time t -25 - r V = 250 V, I = 8.0 A, DD D ns b, c R = 9.1 , R = 30 , see fig. 10 g D Turn-Off Delay Time t -27- d(off) Fall Time t -19- f Drain-Source Body Diode Characteristics MOSFET symbol Continuous Source-Drain Diode Current I D -- 8.0 S showing the A integral reverse G a Pulsed Diode Forward Current I -- 28 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = 8.0 A, V = 0 V -- 2.0 V SD J S GS Body Diode Reverse Recovery Time t - 490 740 ns rr b, c T = 25 C, I = 8.0 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -3.0 4.5 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. c. Uses SiHF840LC data and test conditions. www.vishay.com Document Number: 91068 2 S11-1050-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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