IRF8707GPbF Applications HEXFET Power MOSFET Control MOSFET of Sync-Buck V R max Qg DSS DS(on) Converters used for Notebook Processor Power 11.9m V = 10V 30V 6.2nC GS Control MOSFET for Isolated DC-DC Converters in Networking Systems A Benefits A 1 8 S D Very Low Gate Charge 2 7 S D Very Low R at 4.5V V DS(on) GS 3 6 Ultra-Low Gate Impedance S D Fully Characterized Avalanche Voltage 4 5 G D and Current SO-8 20V V Max. Gate Rating GS Top View 100% tested for Rg Lead-Free Halogen-Free Description The IRF8707GPbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8707GPbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook and Netcom applications. Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 30 DS V V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V I T = 25C 11 A GS D I T = 70C Continuous Drain Current, V 10V GS 9.1 A D A Pulsed Drain Current I 88 DM P T = 25C Power Dissipation 2.5 A D W P T = 70C Power Dissipation 1.6 D A Linear Derating Factor 0.02 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units Junction-to-Drain Lead R JL 20 C/W Junction-to-Ambient R JA 50 Notes through are on page 9 www.irf.com 1 07/10/09 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A GS D V /T DSS J Breakdown Voltage Temp. Coefficient 0.022 V/C Reference to 25C, I = 1mA D R DS(on) Static Drain-to-Source On-Resistance 9.3 11.9 V = 10V, I = 11A GS D m 14.2 17.5 V = 4.5V, I = 8.8A GS D V Gate Threshold Voltage 1.35 1.80 2.35 V V = V , I = 25A GS(th) DS GS D V Gate Threshold Voltage Coefficient -5.8 mV/C V = V , I = 25A GS(th) DS GS D I Drain-to-Source Leakage Current 1.0 V = 24V, V = 0V DSS DS GS A 150 V = 24V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 100 V = 20V GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 25 S V = 15V, I = 8.8A DS D Q g Total Gate Charge 6.2 9.3 Q Pre-Vth Gate-to-Source Charge 1.4 V = 15V gs1 DS Q Post-Vth Gate-to-Source Charge 0.7 V = 4.5V gs2 GS nC Q Gate-to-Drain Charge 2.2 I = 8.8A gd D Q godr Gate Charge Overdrive 1.9 See Figs. 15 & 16 Q Switch Charge (Q + Q ) sw gs2 gd 2.9 Q oss Output Charge 3.7 nC V = 16V, V = 0V DS GS R g Gate Resistance 2.2 3.7 t d(on) Turn-On Delay Time 6.7 V = 15V, V = 4.5V DD GS t Rise Time 7.9 I = 8.8A r D ns t Turn-Off Delay Time 7.3 d(off) R = 1.8 G t Fall Time 4.4 f See Fig. 18 C iss Input Capacitance 760 V = 0V GS C oss Output Capacitance 170 pF V = 15V DS C rss Reverse Transfer Capacitance 82 = 1.0MHz Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E AS 53 mJ Avalanche Current I AR 8.8 A Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 3.1 A (Body Diode) showing the G I Pulsed Source Current integral reverse SM 88 A S (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.0 V T = 25C, I = 8.8A, V = 0V J S GS t rr Reverse Recovery Time 12 18 ns T = 25C, I = 8.8A, V = 15V DD J F Q di/dt = 300A/s rr Reverse Recovery Charge 13 20 nC t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com