X-On Electronics has gained recognition as a prominent supplier of IRF8714GTRPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF8714GTRPBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF8714GTRPBF Infineon

IRF8714GTRPBF electronic component of Infineon
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See Product Specifications
Part No.IRF8714GTRPBF
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET MOSFT 30V 14A 8.7mOhm 8.1nC
Datasheet: IRF8714GTRPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.9215
10 : USD 0.9332
100 : USD 0.5208
500 : USD 0.4214
1000 : USD 0.3566
4000 : USD 0.3566
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Configuration
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the IRF8714GTRPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF8714GTRPBF and other electronic components in the MOSFETs category and beyond.

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IRF8714GPbF Applications HEXFET Power MOSFET Control MOSFET of Sync-Buck V R max Qg Converters used for Notebook DSS DS(on) Processor Power 30V 8.7m V = 10V 8.1nC GS Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits A A Very Low Gate Charge 1 8 S D Very Low R at 4.5V V DS(on) GS 2 7 S D Ultra-Low Gate Impedance 3 6 S D Fully Characterized Avalanche Voltage 4 5 G D and Current 20V V Max. Gate Rating GS SO-8 Top View 100% tested for Rg Lead-Free Halogen-Free Description The IRF8714GPbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8714GPbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for Notebook and Netcom applications. Absolute Maximum Ratings Parameter Max. Units V DS Drain-to-Source Voltage 30 V V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V I T = 25C 14 A GS D I T = 70C Continuous Drain Current, V 10V GS 11 A D A Pulsed Drain Current I 110 DM P T = 25C A Power Dissipation 2.5 D W P T = 70C Power Dissipation 1.6 D A Linear Derating Factor 0.02 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units Junction-to-Drain Lead R 20 JL C/W Junction-to-Ambient R JA 50 Notes through are on page 9 www.irf.com 1 07/10/09 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A GS D V /T DSS J Breakdown Voltage Temp. Coefficient 0.021 V/C Reference to 25C, I = 1mA D R Static Drain-to-Source On-Resistance 7.1 8.7 V = 10V, I = 14A DS(on) m GS D 10.9 13 V = 4.5V, I = 11A GS D V Gate Threshold Voltage 1.35 1.80 2.35 V V = V , I = 25A GS(th) DS GS D V GS(th) Gate Threshold Voltage Coefficient -6.0 mV/C V = V , I = 25A DS GS D I DSS Drain-to-Source Leakage Current 1.0 A V = 24V, V = 0V DS GS 150 V = 24V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 100 nA V = 20V GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 71 S V = 15V, I = 11A DS D Q Total Gate Charge 8.1 12 g Q Pre-Vth Gate-to-Source Charge 1.9 V = 15V gs1 DS Q gs2 Post-Vth Gate-to-Source Charge 1.0 nC V = 4.5V GS Q gd Gate-to-Drain Charge 3.0 I = 11A D Q godr Gate Charge Overdrive 2.2 See Figs. 15 & 16 Q Switch Charge (Q + Q ) sw gs2 gd 4.0 Q oss Output Charge 4.8 nC V = 16V, V = 0V DS GS R g Gate Resistance 1.6 2.6 t d(on) Turn-On Delay Time 10 V = 15V, V = 4.5V DD GS t Rise Time 9.9 I = 11A r D t Turn-Off Delay Time 11 ns d(off) R = 1.8 G t Fall Time 5.0 f See Fig. 18 C iss Input Capacitance 1020 V = 0V GS C oss Output Capacitance 220 pF V = 15V DS C rss Reverse Transfer Capacitance 110 = 1.0MHz Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 65 mJ AS Avalanche Current I 11 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I D Continuous Source Current 3.1 MOSFET symbol S (Body Diode) A showing the G I SM Pulsed Source Current 110 integral reverse S (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.0 V T = 25C, I = 11A, V = 0V J S GS t rr Reverse Recovery Time 14 21 ns T = 25C, I = 11A, V = 15V DD J F Q di/dt = 300A/s Reverse Recovery Charge 15 23 nC rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on 2 www.irf.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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