97137A IRF8788PbF HEXFET Power MOSFET Applications Synchronous MOSFET for Notebook V R max Qg DSS DS(on) Processor Power 30V 2.8m V = 10V 44nC Synchronous Rectifier MOSFET for GS Isolated DC-DC Converters Benefits A A Very Low Gate Charge 1 8 S D Very Low R at 4.5V V DS(on) GS 2 7 S D Ultra-Low Gate Impedance 3 6 S D Fully Characterized Avalanche Voltage 4 5 and Current G D 20V V Max. Gate Rating GS SO-8 Top View 100% tested for Rg Lead-Free Description The IRF8788PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8788PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook and Netcom applications. Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 30 DS V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 24 GS D A 10V I T = 70C Continuous Drain Current, V 19 A GS D A Pulsed Drain Current I 190 DM P T = 25C Power Dissipation 2.5 D A W P T = 70C Power Dissipation 1.6 D A Linear Derating Factor 0.02 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units Junction-to-Drain Lead R 20 JL C/W Junction-to-Ambient R 50 JA Notes through are on page 9 www.irf.com 1 8/18/08 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.024 V/C Reference to 25C, I = 1mA DSS J D R Static Drain-to-Source On-Resistance 2.3 2.8 V = 10V, I = 24A DS(on) GS D m 3.04 3.8 V = 4.5V, I = 19A GS D V Gate Threshold Voltage 1.35 1.80 2.35 V V = V , I = 100A GS(th) DS GS D V Gate Threshold Voltage Coefficient -6.59 mV/C GS(th) I Drain-to-Source Leakage Current 1.0 V = 24V, V = 0V DSS DS GS A 150 V = 24V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 95 S V = 15V, I = 19A DS D Q Total Gate Charge 44 66 g Q Pre-Vth Gate-to-Source Charge 12 V = 15V gs1 DS Q Post-Vth Gate-to-Source Charge 4.7 V = 4.5V gs2 GS nC Q Gate-to-Drain Charge 14 I = 19A gd D Q Gate Charge Overdrive 13.3 See Figs. 17a & 17b godr Q Switch Charge (Q + Q ) 18.7 sw gs2 gd Q Output Charge 22 nC V = 16V, V = 0V oss DS GS R Gate Resistance 0.54 1.09 g t Turn-On Delay Time 23 = 15V, V = 4.5V V d(on) DD GS t Rise Time 24 I = 19A r D ns R = 1.8 t Turn-Off Delay Time 23 G d(off) See Fig. 15a & 15b t Fall Time 11 f C Input Capacitance 5720 V = 0V iss GS C Output Capacitance 980 pF V = 15V oss DS C Reverse Transfer Capacitance 450 = 1.0MHz rss Avalanche Characteristics Parameter Units Typ. Max. Single Pulse Avalanche Energy E 230 mJ AS Avalanche Current I 19 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 3.1 A (Body Diode) showing the G I Pulsed Source Current integral reverse SM 190 A S (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.0 V T = 25C, I = 19A, V = 0V J S GS 0.75 V T = 25C, I = 2.2A, V = 0V J S GS t Reverse Recovery Time 24 36 ns T = 25C, I = 19A, V = 15V rr DD J F Q Reverse Recovery Charge 33 50 nC di/dt = 230A/ s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on 2 www.irf.com