X-On Electronics has gained recognition as a prominent supplier of IRF830BPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF830BPBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF830BPBF Vishay

Hot IRF830BPBF electronic component of Vishay
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Part No.IRF830BPBF
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 500V 1.5ohm@10V 5.3A N-Ch D-SRS
Datasheet: IRF830BPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5431 ea
Line Total: USD 0.54 
Availability - 923
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
923
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5431
10 : USD 0.5084

555
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 1.104
10 : USD 0.6681
100 : USD 0.6049
500 : USD 0.5394
1000 : USD 0.5313

923
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 15
Multiples : 1
15 : USD 0.5431

   
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We are delighted to provide the IRF830BPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF830BPBF and other electronic components in the MOSFETs category and beyond.

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IRF830, SiHF830 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt rating V (V) 500 DS Available Repetitive avalanche rated R ( )V = 10 V 1.5 DS(on) GS Fast switching Available Q max. (nC) 38 g Ease of paralleling Q (nC) 5.0 gs Simple drive requirements Q (nC) 22 gd Material categorization: for definitions of compliance Configuration Single please see www.vishay.com/doc 99912 D Note * This datasheet provides information about parts that are TO-220AB RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. G DESCRIPTION Third generation power MOSFETs from Vishay provide the S designer with the best combination of fast switching, S D ruggedized device design, low on-resistance and G N-Channel MOSFET cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF830PbF Lead (Pb)-free SiHF830-E3 IRF830 SnPb SiHF830 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 500 DS V Gate-Source Voltage V 20 GS T = 25 C 4.5 C Continuous Drain Current V at 10 V I GS D T = 100 C 2.9 A C a Pulsed Drain Current I 18 DM Linear Derating Factor 0.59 W/C b Single Pulse Avalanche Energy E 280 mJ AS a Repetitive Avalanche Current I 4.5 A AR a Repetitive Avalanche Energy E 7.4 mJ AR Maximum Power Dissipation T = 25 C P 74 W C D c Peak Diode Recovery dV/dt dV/dt 3.5 V/ns Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C d Soldering Recommendations (Peak temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 24 mH, R = 25 , I = 4.5 A (see fig. 12). DD J g AS c. I 4.5 A, dI/dt 75 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. S16-0754-Rev. C, 02-May-16 Document Number: 91063 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRF830, SiHF830 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Case-to-Sink, Flat, Greased Surface R 0.50 - C/W thCS Maximum Junction-to-Case (Drain) R -1.7 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 500 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.61 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 400 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 2.7 A -- 1.5 DS(on) GS D b Forward Transconductance g V = 50 V, I = 2.7 A 2.5 - - S fs DS D Dynamic Input Capacitance C - 610 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 160- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -68- rss Total Gate Charge Q -- 38 g I = 3.1 A, V = 400 V, D DS Gate-Source Charge Q --V = 10 V 5.0 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --22 gd Turn-On Delay Time t -8.2 - d(on) Rise Time t -16 - r V = 250 V, I = 3.1 A DD D ns b R = 12 , R = 79, see fig. 10 Turn-Off Delay Time t -4g D 2- d(off) Fall Time t -16- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH G package and center of Internal Source Inductance L -7.5 - S die contact S Gate Input Resistance R f = 1 MHz, open drain 0.5 - 2.7 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 4.5 S showing the A integral reverse G a Pulsed Diode Forward Current I -- 18 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = 4.5 A, V = 0 V -- 1.6 V SD J S GS Body Diode Reverse Recovery Time t - 320 640 ns rr b T = 25 C, I = 3.1 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -1.0 2.0 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S16-0754-Rev. C, 02-May-16 Document Number: 91063 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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