X-On Electronics has gained recognition as a prominent supplier of IRF7862PBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF7862PBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF7862PBF Infineon

IRF7862PBF electronic component of Infineon
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See Product Specifications
Part No.IRF7862PBF
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET 30V 1 N-CH HEXFET 3.3mOhms 30nC
Datasheet: IRF7862PBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
20: USD 0.7787 ea
Line Total: USD 15.57 
Availability - 0
MOQ: 20  Multiples: 95
Pack Size: 95
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 1.7435
10 : USD 1.3759
100 : USD 1.1056
500 : USD 0.9056
1000 : USD 0.7812
5000 : USD 0.7347

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 20
Multiples : 95
20 : USD 0.7787
200 : USD 0.7207
1000 : USD 0.6435

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 190
Multiples : 95
190 : USD 0.6902

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Configuration
Brand
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IRF7862PBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF7862PBF and other electronic components in the MOSFETs category and beyond.

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IRF7862PbF HEXFET Power MOSFET Applications V R max Qg DSS DS(on) Synchronous MOSFET for Notebook Processor Power 3.3m V = 10V 30V 30nC GS Synchronous Rectifier MOSFET for Isolated DC-DC Converters A A 1 8 S D Benefits 2 7 S D Very Low R at 4.5V V DS(on) GS 3 6 S D Ultra-Low Gate Impedance 4 5 G D Fully Characterized Avalanche Voltage and Current SO-8 Top View 20V V Max. Gate Rating GS 100% tested for Rg Lead-Free Absolute Maximum Ratings Parameter Max. Units V DS Drain-to-Source Voltage 30 V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V GS 21 D A Continuous Drain Current, V 10V I T = 70C GS 17 A D A Pulsed Drain Current I 170 DM P T = 25C A Power Dissipation 2.5 D W P T = 70C Power Dissipation 1.6 D A Linear Derating Factor 0.02 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units Junction-to-Drain Lead R 20 JL C/W Junction-to-Ambient R JA 50 Notes through are on page 9 www.irf.com 1 06/04/09 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A DSS GS D V /T DSS J Breakdown Voltage Temp. Coefficient 0.023 V/C Reference to 25C, I = 1mA D R DS(on) Static Drain-to-Source On-Resistance 3.0 3.3 V = 10V, I = 20A GS D m 3.7 4.5 V = 4.5V, I = 16A GS D V GS(th) Gate Threshold Voltage 1.35 2.35 V V = V , I = 100A DS GS D V GS(th) Gate Threshold Voltage Coefficient -5.4 mV/C V = V , I = 250A DS GS D I Drain-to-Source Leakage Current 1.0 V = 24V, V = 0V DSS DS GS A 150 V = 24V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 87 S V = 15V, I = 16A DS D Q g Total Gate Charge 30 45 Q gs1 Pre-Vth Gate-to-Source Charge 7.5 V = 15V DS Q gs2 Post-Vth Gate-to-Source Charge 3.1 V = 4.5V GS nC Q Gate-to-Drain Charge 9.8 I = 16A gd D Q Gate Charge Overdrive 9.6 See Figs. 15 & 16 godr Q Switch Charge (Q + Q ) 12.9 sw gs2 gd Q oss Output Charge 18 nC V = 16V, V = 0V DS GS R g Gate Resistance 1.0 1.6 t d(on) Turn-On Delay Time 16 V = 15V, V = 4.5V DD GS t r Rise Time 19 I = 16A D ns t d(off) Turn-Off Delay Time 18 R = 1.8 G t Fall Time 11 f See Fig. 18 C Input Capacitance 4090 V = 0V iss GS C Output Capacitance 810 V = 15V oss pF DS C rss Reverse Transfer Capacitance 390 = 1.0MHz Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E AS 350 mJ Avalanche Current I AR 16 A Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbol 3.1 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 170 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 16A, V = 0V SD J S GS t rr Reverse Recovery Time 17 26 ns T = 25C, I = 16A, V = 15V J F DD Q di/dt = 430A/s rr Reverse Recovery Charge 33 50 nC t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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