IRF7862PbF HEXFET Power MOSFET Applications V R max Qg DSS DS(on) Synchronous MOSFET for Notebook Processor Power 3.3m V = 10V 30V 30nC GS Synchronous Rectifier MOSFET for Isolated DC-DC Converters A A 1 8 S D Benefits 2 7 S D Very Low R at 4.5V V DS(on) GS 3 6 S D Ultra-Low Gate Impedance 4 5 G D Fully Characterized Avalanche Voltage and Current SO-8 Top View 20V V Max. Gate Rating GS 100% tested for Rg Lead-Free Absolute Maximum Ratings Parameter Max. Units V DS Drain-to-Source Voltage 30 V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V GS 21 D A Continuous Drain Current, V 10V I T = 70C GS 17 A D A Pulsed Drain Current I 170 DM P T = 25C A Power Dissipation 2.5 D W P T = 70C Power Dissipation 1.6 D A Linear Derating Factor 0.02 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units Junction-to-Drain Lead R 20 JL C/W Junction-to-Ambient R JA 50 Notes through are on page 9 www.irf.com 1 06/04/09 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A DSS GS D V /T DSS J Breakdown Voltage Temp. Coefficient 0.023 V/C Reference to 25C, I = 1mA D R DS(on) Static Drain-to-Source On-Resistance 3.0 3.3 V = 10V, I = 20A GS D m 3.7 4.5 V = 4.5V, I = 16A GS D V GS(th) Gate Threshold Voltage 1.35 2.35 V V = V , I = 100A DS GS D V GS(th) Gate Threshold Voltage Coefficient -5.4 mV/C V = V , I = 250A DS GS D I Drain-to-Source Leakage Current 1.0 V = 24V, V = 0V DSS DS GS A 150 V = 24V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 87 S V = 15V, I = 16A DS D Q g Total Gate Charge 30 45 Q gs1 Pre-Vth Gate-to-Source Charge 7.5 V = 15V DS Q gs2 Post-Vth Gate-to-Source Charge 3.1 V = 4.5V GS nC Q Gate-to-Drain Charge 9.8 I = 16A gd D Q Gate Charge Overdrive 9.6 See Figs. 15 & 16 godr Q Switch Charge (Q + Q ) 12.9 sw gs2 gd Q oss Output Charge 18 nC V = 16V, V = 0V DS GS R g Gate Resistance 1.0 1.6 t d(on) Turn-On Delay Time 16 V = 15V, V = 4.5V DD GS t r Rise Time 19 I = 16A D ns t d(off) Turn-Off Delay Time 18 R = 1.8 G t Fall Time 11 f See Fig. 18 C Input Capacitance 4090 V = 0V iss GS C Output Capacitance 810 V = 15V oss pF DS C rss Reverse Transfer Capacitance 390 = 1.0MHz Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E AS 350 mJ Avalanche Current I AR 16 A Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbol 3.1 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 170 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 16A, V = 0V SD J S GS t rr Reverse Recovery Time 17 26 ns T = 25C, I = 16A, V = 15V J F DD Q di/dt = 430A/s rr Reverse Recovery Charge 33 50 nC t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com