IRF7465PbF SMPS MOSFET HEXFET Power MOSFET Applications V R max I DSS DS(on) D High frequency DC-DC converters 150V 0.28 V = 10V 1.9A GS Lead-Free Benefits A Low Gate to Drain Charge to Reduce A 1 8 S D Switching Losses 2 7 S D Fully Characterized Capacitance Including Effective C to Simplify Design (See 3 6 OSS S D App. Note AN1001) 4 5 G D Fully Characterized Avalanche Voltage and Current SO-8 Top View Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 1.9 D A GS I T = 70C Continuous Drain Current, V 10V 1.5 A D A GS I Pulsed Drain Current 15 DM P T = 25C Power Dissipation 2.5 W D A Linear Derating Factor 0.02 W/C V Gate-to-Source Voltage 30 V GS dv/dt Peak Diode Recovery dv/dt 7.8 V/ns T Operating Junction and -55 to + 150 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Drain Lead 20 JL R Junction-to-Ambient 50 C/W JA Notes through are on page 8 www.irf.com 1 09/21/04IRF7465PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 150 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.19 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 0.28 V = 10V, I = 1.14A DS(on) GS D V Gate Threshold Voltage 3.0 5.5 V V = V , I = 250A GS(th) DS GS D 25 V = 150V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 120V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage 100 V = 30V GS nA I GSS Gate-to-Source Reverse Leakage -100 V = -30V GS Dynamic T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions g Forward Transconductance 0.75 S V = 50V, I = 1.14A fs DS D Q Total Gate Charge 10 15 I = 1.14A g D Q Gate-to-Source Charge 2.7 4.0 nC V = 120V gs DS Q Gate-to-Drain Mille) Charge 5.0 7.5 V = 10V gd GS t Turn-On Delay Time 7.0 V = 75V d(on) DD t Rise Time 1.2 I = 1.14A r D ns t Turn-Off Delay Time 10 R = 6.0 d(off) G t Fall Time 9.0 V = 10V f GS C Input Capacitance 330 V = 0V iss GS C Output Capacitance 80 V = 25V oss DS C Reverse Transfer Capacitance 16 pF = 1.0MHz rss C Output Capacitance 420 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 41 V = 0V, V = 120V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 76 V = 0V, V = 0V to 120V oss GS DS Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 40 mJ AS I Avalanche Current 1.9 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 2.3 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 15 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 1.14A, V = 0V SD J S GS t Reverse Recovery Time 62 93 ns T = 25C, I = 1.14A rr J F Q Reverse RecoveryCharge 160 240 nC di/dt = 100A/s rr 2 www.irf.com