X-On Electronics has gained recognition as a prominent supplier of IRF7476PBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF7476PBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF7476PBF Infineon

IRF7476PBF electronic component of Infineon
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See Product Specifications
Part No.IRF7476PBF
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET 20V DUAL N-CH HEXFET 8mOhms 26nC
Datasheet: IRF7476PBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.3152
10 : USD 0.6643
100 : USD 0.5589
500 : USD 0.5287
1000 : USD 0.5024
2500 : USD 0.5024
10000 : USD 0.5024
25000 : USD 0.4992
50000 : USD 0.4831
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the IRF7476PBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF7476PBF and other electronic components in the MOSFETs category and beyond.

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IRF7476PbF HEXFET Power MOSFET Applications V R max I DSS DS(on) D High Frequency 3.3V and 5V input Point- 12V 8.0m V = 4.5V 15A GS of-Load Synchronous Buck Converters for Netcom and Computing Applications. Power Management for Netcom, A Computing and Portable Applications. A 1 8 S D Lead-Free 2 7 S D 3 6 S D Benefits 4 5 G D Ultra-Low Gate Impedance SO-8 Top View Very Low R DS(on) Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings Symbol Parameter Max. Units V Drain-Source Voltage 12 V DS V Gate-to-Source Voltage 12 V GS I T = 25C Continuous Drain Current, V 10V 15 D A GS I T = 70C Continuous Drain Current, V 10V 12 A D A GS I Pulsed Drain Current 120 DM P T = 25C Maximum Power Dissipation 2.5 W D A P T = 70C Maximum Power Dissipation 1.6 W D A Linear Derating Factor 0.02 W/C T , T Junction and Storage Temperature Range -55 to + 150 C J STG Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Drain Lead 20 JL R Junction-to-Ambient 50 C/W JA Notes through are on page 8 www.irf.com 1 IRF7476PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 12 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.014 V/C Reference to 25C, I = 1mA (BR)DSS J D 6.0 8.0 V = 4.5V, I = 15A GS D m R Static Drain-to-Source On-Resistance DS(on) 12 30 V = 2.8V, I = 12A GS D V Gate Threshold Voltage 0.6 1.9 V V = V , I = 250A GS(th) DS GS D 100 V = 9.6V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 9.6V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage 200 V = 12V GS I GSS nA Gate-to-Source Reverse Leakage -200 V = -12V GS Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions g Forward Transconductance 31 S V = 6.0V, I = 12A fs DS D Q Total Gate Charge 26 40 I = 12A g D Q Gate-to-Source Charge 4.6 nC V = 10V gs DS Q Gate-to-Drain Mille) Charge 11 V = 4.5V gd GS Q Output Gate Charge 17 V = 0V, V = 5.0V oss GS DS t Turn-On Delay Time 11 V = 6.0V d(on) DD t Rise Time 29 I = 12A r D ns t Turn-Off Delay Time 19 R = 1.8 d(off) G t Fall Time 8.3 V = 4.5V f GS C Input Capacitance 2550 V = 0V iss GS C Output Capacitance 2190 V = 6.0V oss DS C Reverse Transfer Capacitance 450 pF = 1.0MHz rss Avalanche Characteristics Symbol Parameter Typ. Max. Units E Single Pulse Avalanche Energy 160 mJ AS I Avalanche Current 12 A AR Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 2.5 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 120 (Body Diode) p-n junction diode. S 0.87 1.2 V T = 25C, I = 12A, V = 0V J S GS V Diode Forward Voltage SD 0.73 T = 125C, I = 12A, V = 0V J S GS t Reverse Recovery Time 55 82 ns T = 25C, I = 12A, V =12V rr J F R Q Reverse Recovery Charge 59 89 nC di/dt = 100A/s rr t Reverse Recovery Time 54 81 ns T = 125C, I = 12A, V =12V rr J F R Q Reverse Recovery Charge 60 90 nC di/dt = 100A/s rr 2 www.irf.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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