IRF7476PbF HEXFET Power MOSFET Applications V R max I DSS DS(on) D High Frequency 3.3V and 5V input Point- 12V 8.0m V = 4.5V 15A GS of-Load Synchronous Buck Converters for Netcom and Computing Applications. Power Management for Netcom, A Computing and Portable Applications. A 1 8 S D Lead-Free 2 7 S D 3 6 S D Benefits 4 5 G D Ultra-Low Gate Impedance SO-8 Top View Very Low R DS(on) Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings Symbol Parameter Max. Units V Drain-Source Voltage 12 V DS V Gate-to-Source Voltage 12 V GS I T = 25C Continuous Drain Current, V 10V 15 D A GS I T = 70C Continuous Drain Current, V 10V 12 A D A GS I Pulsed Drain Current 120 DM P T = 25C Maximum Power Dissipation 2.5 W D A P T = 70C Maximum Power Dissipation 1.6 W D A Linear Derating Factor 0.02 W/C T , T Junction and Storage Temperature Range -55 to + 150 C J STG Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Drain Lead 20 JL R Junction-to-Ambient 50 C/W JA Notes through are on page 8 www.irf.com 1 IRF7476PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 12 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.014 V/C Reference to 25C, I = 1mA (BR)DSS J D 6.0 8.0 V = 4.5V, I = 15A GS D m R Static Drain-to-Source On-Resistance DS(on) 12 30 V = 2.8V, I = 12A GS D V Gate Threshold Voltage 0.6 1.9 V V = V , I = 250A GS(th) DS GS D 100 V = 9.6V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 9.6V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage 200 V = 12V GS I GSS nA Gate-to-Source Reverse Leakage -200 V = -12V GS Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions g Forward Transconductance 31 S V = 6.0V, I = 12A fs DS D Q Total Gate Charge 26 40 I = 12A g D Q Gate-to-Source Charge 4.6 nC V = 10V gs DS Q Gate-to-Drain Mille) Charge 11 V = 4.5V gd GS Q Output Gate Charge 17 V = 0V, V = 5.0V oss GS DS t Turn-On Delay Time 11 V = 6.0V d(on) DD t Rise Time 29 I = 12A r D ns t Turn-Off Delay Time 19 R = 1.8 d(off) G t Fall Time 8.3 V = 4.5V f GS C Input Capacitance 2550 V = 0V iss GS C Output Capacitance 2190 V = 6.0V oss DS C Reverse Transfer Capacitance 450 pF = 1.0MHz rss Avalanche Characteristics Symbol Parameter Typ. Max. Units E Single Pulse Avalanche Energy 160 mJ AS I Avalanche Current 12 A AR Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 2.5 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 120 (Body Diode) p-n junction diode. S 0.87 1.2 V T = 25C, I = 12A, V = 0V J S GS V Diode Forward Voltage SD 0.73 T = 125C, I = 12A, V = 0V J S GS t Reverse Recovery Time 55 82 ns T = 25C, I = 12A, V =12V rr J F R Q Reverse Recovery Charge 59 89 nC di/dt = 100A/s rr t Reverse Recovery Time 54 81 ns T = 125C, I = 12A, V =12V rr J F R Q Reverse Recovery Charge 60 90 nC di/dt = 100A/s rr 2 www.irf.com