IRF7413ZPbF HEXFET Power MOSFET Applications V R max I DSS DS(on) D Control FET for Notebook Processor 10m V = 10V 30V 13A Power GS Control and Synchronous Rectifier MOSFET for Graphics Cards and POL A Converters in Computing, Networking A 1 8 S D and Telecommunication Systems 2 7 S D 3 6 S D Benefits 4 5 G D Ultra-Low Gate Impedance SO-8 Very Low R DS(on) Top View Fully Characterized Avalanche Voltage and Current 100% Tested for R G Lead-Free Absolute Maximum Ratings Parameter Max. Units V DS Drain-to-Source Voltage 30 V V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V I T = 25C GS 13 A D Continuous Drain Current, V 10V I T = 70C 10 A A GS D Pulsed Drain Current I 100 DM P T = 25C Power Dissipation 2.5 W A D P T = 70C Power Dissipation 1.6 A D Linear Derating Factor 0.02 W/C T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units R Junction-to-Drain Lead 20 C/W JL Junction-to-Ambient R 50 JA Notes through are on page 10 www.irf.com 1 05/08/08 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A GS D V /T DSS J Breakdown Voltage Temp. Coefficient 0.025 V/C Reference to 25C, I = 1mA D R DS(on) Static Drain-to-Source On-Resistance 8.0 10 V = 10V, I = 13A m GS D 10.5 13 V = 4.5V, I = 10A GS D V Gate Threshold Voltage 1.35 1.80 2.25 V V = V , I = 25A GS(th) DS GS D V /T Gate Threshold Voltage Coefficient -5.0 mV/C GS(th) J I Drain-to-Source Leakage Current 1.0 A V = 24V, V = 0V DSS DS GS 150 V = 24V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 100 nA V = 20V GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 62 S V = 15V, I = 10A DS D Q g Total Gate Charge 9.5 14 Q Pre-Vth Gate-to-Source Charge 3.0 V = 15V gs1 DS Q Post-Vth Gate-to-Source Charge 1.0 nC V = 4.5V gs2 GS Q Gate-to-Drain Charge 3.0 I = 10A gd D Q godr Gate Charge Overdrive 2.5 See Fig. 16 Q Switch Charge (Q + Q ) sw gs2 gd 4.0 Q oss Output Charge 5.6 nC V = 15V, V = 0V DS GS R Gate Resistance 2.3 4.5 G t d(on) Turn-On Delay Time 8.7 V = 16V, V = 4.5V DD GS t Rise Time 6.3 I = 10A r D t Turn-Off Delay Time 11 ns Clamped Inductive Load d(off) t Fall Time 3.8 f C iss Input Capacitance 1210 V = 0V GS C oss Output Capacitance 270 pF V = 15V DS C rss Reverse Transfer Capacitance 140 = 1.0MHz Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E AS 32 mJ Avalanche Current I AR 10 A Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current 3.1 MOSFET symbol S (Body Diode) A showing the I Pulsed Source Current 100 integral reverse SM (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.0 V T = 25C, I = 10A, V = 0V J S GS t rr Reverse Recovery Time 24 36 ns T = 25C, I = 10A, V = 15V DD J F Q di/dt = 100A/s rr Reverse Recovery Charge 16 24 nC t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com