IRF740AS, SiHF740AS, IRF740AL, SiHF740AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) 400 Definition DS R ( )V = 10 V 0.55 Low Gate Charge Q Results in Simple Drive g DS(on) GS Requirement Q (Max.) (nC) 36 g Improved Gate, Avalanche and Dynamic dV/dt Q (nC) 9.9 gs Ruggedness Q (nC) 16 gd Fully Characterized Capacitance and Configuration Single Avalanche Voltage and Current D Effective C specified oss 2 2 Compliant to RoHS Directive 2002/95/EC I PAK (TO-262) D PAK (TO-263) APPLICATIONS Switch Mode Power Supply (SMPS) G Uninterruptible Power Supply G D S High speed Power Switching D S G TYPICAL SMPS TOPOLOGIES S Single Transistor Flyback Xfmr. Reset Single Transistor Forward Xfmr. Reset (Both for US Line N-Channel MOSFET Input Only) ORDERING INFORMATION 2 2 2 2 Package D PAK (TO-263) D PAK (TO-263) D PAK (TO-263) I PAK (TO-262) a a Lead (Pb)-free and Halogen-free SiHF740AS-GE3 SiHF740ASTRL-GE3 SiHF740ASTRR-GE3 SiHF740AL-GE3 a a IRF740ASPbF IRF740ASTRLPbF IRF740ASTRRPbF IRF740ALPbF Lead (Pb)-free a a SiHF740AS-E3 SiHF740ASTL-E3 SiHF740ASTR-E3 SiHF740AL-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 400 DS V Gate-Source Voltage V 30 GS T = 25 C 10 C e Continuous Drain Current V at 10 V I GS D T = 100 C 6.3 A C a, e Pulsed Drain Current I 40 DM Linear Derating Factor 1.0 W/C b, e Single Pulse Avalanche Energy E 630 mJ AS a Avalanche Current I 10 A AR a Repetiitive Avalanche Energy E 12.5 mJ AR T = 25 C 3.1 A Maximum Power Dissipation P W D T = 25 C 125 C c, e Peak Diode Recovery dV/dt dV/dt 5.9 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Starting T = 25 C, L = 12.6 mH, R = 25 , I = 10 A (see fig. 12). J g AS c. I 10 A, dI/dt 330 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. Uses IRF740A, SiHF740A data and test conditions. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91052 www.vishay.com S11-1048-Rev. C, 30-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRF740AS, SiHF740AS, IRF740AL, SiHF740AL Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient (PCB R -40 a thJA Mounted, Steady-State) C/W Maximum Junction-to-Case (Drain) R -1.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = 250 A 400 - - V DS GS D d V Temperature Coefficient V /T Reference to 25 C, I = 1 mA -0.48 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 30 V - - 100 nA GSS GS V = 400 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 320 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 6.0 A - - 0.55 DS(on) GS D d Forward Transconductance g V = 50 V, I = 6.0 A 4.9 - - S fs DS D Dynamic Input Capacitance C - 1030 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 170- oss DS d f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -7.7- rss pF V = 1.0 V, f = 1.0 MHz - 1490 - DS Output Capacitance C oss V = 0 V V = 320 V, f = 1.0 MHz - 52 - GS DS c, d Effective Output Capacitance C eff. V = 0 V to 320 V -61 - oss DS Total Gate Charge Q -- 36 g I = 10 A, V = 320 V, D DS Gate-Source Charge Q --V = 10 V 9.9 nC gs GS b, d see fig. 6 and 13 Gate-Drain Charge Q --16 gd Turn-On Delay Time t -10 - d(on) Rise Time t -35 - r V = 200 V, I = 10 A, DD D ns b, d R = 10 , R = 19.5 , see fig. 10 g D Turn-Off Delay Time t -24- d(off) Fall Time t -22- f Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 10 S showing the A integral reverse G a Pulsed Diode Forward Current I p - n junction diode -- 40 SM S b Body Diode Voltage V T = 25 C, I = 10 A, V = 0 V -- 2.0 V SD J S GS Body Diode Reverse Recovery Time t - 240 360 ns rr b, d T = 25 C, I = 10 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -1.9 2.9 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. c. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80 % V . oss oss DS DS d. Uses IRF740A, SiHF740A data and test conditions. www.vishay.com Document Number: 91052 2 S11-1048-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000