A 1 8 D S 2 7 1** S D 3 6 % & & S D ( 4 5 G D 1*2 3 & ( Top View % & % ()* + & % *) , % % + SO-8 - & % % + & & . ,- % /0 Absolute Maximum Ratings Parameter Max. Units Continuous Drain Current, V -10V I T = 25C GS -10 D A T = 70C Continuous Drain Current, V -10V -7.1 A I GS D A I Pulsed Drain Current -45 DM W P T = 25C Power Dissipation 2.5 A D Linear Derating Factor 0.02 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 370 mJ AS dv/dt Peak Diode Recovery dv/dt -5.0 V/ns T Operating Junction and J -55 to + 150 C T Storage Temperature Range STG Thermal Resistance Parameter Max. Units R Junction-to-Ambient 50 C/W JA www.irf.com 1 Static Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -30 V V = 0V, I = -250 A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient -0.024 V/C Reference to 25C, I = -1mA (BR)DSS J D 0.020 V = -10V, I = -5.6A GS D R Static Drain-to-Source On-Resistance DS(on) 0.035 V = -4.5V, I = -2.8A GS D V Gate Threshold Voltage -1.0 -2.04 V V = V , I = -250 A GS(th) DS GS D gfs Forward Transconductance 5.6 S V = -10V, I = -2.8A DS D I Drain-to-Source Leakage Current -1.0 V = -24V, V = 0V DSS DS GS A -25 V = -24V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage -100 V = -20V GSS GS nA Gate-to-Source Reverse Leakage 100 V = 20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge 61 92 I = -5.6A g D Q Gate-to-Source Charge 8.0 12 nC V = -24V gs DS Q Gate-to-Drain Mille) Charge 22 32 V = -10V, See Fig. 6 & 9 gd GS t Turn-On Delay Time 18 V = -15V d(on) DD t Rise Time 49 I = -5.6A r D ns t Turn-Off Delay Time 59 R = 6.2 d(off) G t Fall Time 60 R = 2.7, See Fig. 10 f D C Input Capacitance 1700 V = 0V iss GS C Output Capacitance 890 pF V = -25V oss DS C Reverse Transfer Capacitance 410 = 1.0MHz, See Fig. 5 rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S -3.1 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM -45 S (Body Diode) p-n junction diode. V Diode Forward Voltage -1.0 V T = 25C, I = -5.6A, V = 0V SD J S GS t T = 25C,I = -5.6A Reverse Recovery Time 56 85 rr ns J F di/dt = 100A/s Q Reverse Recovery Charge 99 150 rr nC I & () ( * ) + + ) SD % , -. , / -.) 0 / 1 4 5 * 6 / ) 2 / & ( 3 % 3 &7 ) 2 www.irf.com