PD- 95032 IRF7457PbF SMPS MOSFET HEXFET Power MOSFET Applications High Frequency DC-DC Isolated V R max I DSS DS(on) D Converters with Synchronous Rectification 20V 7.0m 15A for Telecom and Industrial use High Frequency Buck Converters for Computer Processor Power Lead-Free Benefits A A 1 8 S D Ultra-Low R DS(on) 2 7 Very Low Gate Impedance S D Fully Characterized Avalanche Voltage 3 6 S D and Current 4 5 G D SO-8 Top View Absolute Maximum Ratings Symbol Parameter Max. Units V Drain-Source Voltage 20 V DS V Gate-to-Source Voltage 20 V GS I T = 25C Continuous Drain Current, V 10V 15 D A GS I T = 70C Continuous Drain Current, V 10V 12 A D A GS I Pulsed Drain Current 120 DM P T = 25C Maximum Power Dissipation 2.5 W D A P T = 70C Maximum Power Dissipation 1.6 W D A Linear Derating Factor 0.02 W/C T , T Junction and Storage Temperature Range -55 to + 150 C J STG Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Drain Lead 20 JL R Junction-to-Ambient 50 C/W JA Notes through are on page 8 www.irf.com 1 10/12/04IRF7457PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 20 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.023 V/C Reference to 25C, I = 1mA (BR)DSS J D 5.5 7.0 V = 10V, I = 15A GS D m R Static Drain-to-Source On-Resistance DS(on) 8.0 10.5 V = 4.5V, I = 12A GS D V Gate Threshold Voltage 1.0 3.0 V V = V , I = 250A GS(th) DS GS D 20 V = 16V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 100 V = 16V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage 200 V = 16V GS I GSS nA Gate-to-Source Reverse Leakage -200 V = -16V GS Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions g Forward Transconductance 30 S V = 16V, I = 12A fs DS D Q Total Gate Charge 28 42 I = 12A g D Q Gate-to-Source Charge 11 17 nC V = 10V gs DS Q Gate-to-Drain Mille) Charge 10 15 V = 4.5V, gd GS Q Output Gate Charge 25 38 V = 0V, V = 10V oss GS DS t Turn-On Delay Time 14 V = 10V, d(on) DD t Rise Time 16 I = 12A r D ns t Turn-Off Delay Time 16 R = 1.8 d(off) G t Fall Time 7.5 V = 4.5V f GS C Input Capacitance 3100 V = 0V iss GS C Output Capacitance 1600 V = 10V oss DS C Reverse Transfer Capacitance 270 pF = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 265 mJ AS I Avalanche Current 15 A AR Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 2.5 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 120 (Body Diode) p-n junction diode. S 0.8 1.3 V T = 25C, I = 12A, V = 0V J S GS V Diode Forward Voltage SD 0.67 T = 125C, I = 12A, V = 0V J S GS t Reverse Recovery Time 50 75 ns T = 25C, I = 12A, V = 15V rr J F R Q Reverse Recovery Charge 70 105 nC di/dt = 100A/s rr t Reverse Recovery Time 50 75 ns T = 125C, I = 12A, V =15V rr J F R Q Reverse Recovery Charge 74 110 nC di/dt = 100A/s rr 2 www.irf.com