IRF7456PbF SMPS MOSFET HEXFET Power MOSFET Applications V R max I DSS DS(on) D High Frequency DC-DC Converters 20V 0.0065 16A with Synchronous Rectification Lead-Free A A Ultra-Low R at 4.5V V 1 DS(on) GS 8 S D Low Charge and Low Gate Impedance to 2 7 S D Reduce Switching Losses 3 6 S D Fully Characterized Avalanche Voltage 4 5 and Current G D SO-8 Top View Absolute Maximum Ratings Symbol Parameter Max. Units V Drain-Source Voltage 20 V DS V Gate-to-Source Voltage 12 V GS I T = 25C Continuous Drain Current, V 10V 16 D A GS I T = 70C Continuous Drain Current, V 10V 13 A D A GS I Pulsed Drain Current 130 DM P T = 25C Maximum Power Dissipation 2.5 W D A P T = 70C Maximum Power Dissipation 1.6 W D A Linear Derating Factor 0.02 W/C T , T Junction and Storage Temperature Range -55 to + 150 C J STG Thermal Resistance Parameter Max. Units R Maximum Junction-to-Ambient 50 C/W JA Typical SMPS Topologies Telecom 48V Input Converters with Logic-Level Driven Synchronous Rectifiers through are on page 8 www.irf.com 1 IRF7456PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 20 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.024 V/C Reference to 25C, I = 1mA (BR)DSS J D 0.00470.0065 V = 10V, I = 16A GS D R Static Drain-to-Source On-Resistance DS(on) 0.00570.0075 V = 4.5V, I = 13A GS D 0.011 0.020 V = 2.8V, I = 3.5A GS D V Gate Threshold Voltage 0.6 2.0 V V = V , I = 250A GS(th) DS GS D 20 V = 16V, V = 0V DS GS A I Drain-to-Source Leakage Current DSS 100 V = 16V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage 200 V = 12V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -12V GS Dynamic T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions g Forward Transconductance 44 S V = 10V, I = 16A fs DS D Q Total Gate Charge 41 62 I = 16A g D Q Gate-to-Source Charge 9.7 15 nC V = 16V gs DS Q Gate-to-Drain Mille) Charge 18 27 V = 5.0V, gd GS t Turn-On Delay Time 20 V = 10V d(on) DD t Rise Time 25 I = 1.0A r D ns t Turn-Off Delay Time 50 R = 6.0 d(off) G t Fall Time 52 V = 4.5V f GS C Input Capacitance 3640 V = 0V iss GS C Output Capacitance 1570 V = 15V oss DS C Reverse Transfer Capacitance 330 pF = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 250 mJ AS I Avalanche Current 16 A AR E Repetitive Avalanche Energy 0.25 mJ AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 2.5 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 130 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.2 V T = 25C, I = 2.5A, V = 0V SD J S GS t Reverse Recovery Time 48 72 ns T = 25C, I = 2.5A rr J F Q Reverse RecoveryCharge 74 110 nC di/dt = 100A/s rr 2 www.irf.com