X-On Electronics has gained recognition as a prominent supplier of IRF740BPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF740BPBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF740BPBF Vishay

IRF740BPBF electronic component of Vishay
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Part No.IRF740BPBF
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET 400V 600mOhm10V 10A N-Ch D-SRS
Datasheet: IRF740BPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.124 ea
Line Total: USD 1.12 
Availability - 3881
Ship by Fri. 22 Nov to Wed. 27 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3881
Ship by Fri. 22 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 1.124
10 : USD 0.9255
50 : USD 0.7558
100 : USD 0.6585
500 : USD 0.5992
1000 : USD 0.5687

355
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 1.498
10 : USD 1.358
16 : USD 1.106
44 : USD 1.05
1000 : USD 1.008

935
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 11
Multiples : 1
11 : USD 0.719

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Series
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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We are delighted to provide the IRF740BPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF740BPBF and other electronic components in the MOSFETs category and beyond.

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IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating V (V) 400 DS Available Repetitive Avalanche Rated R ()V = 10 V 0.55 DS(on) GS RoHS* Fast Switching Q (Max.) (nC) 63 COMPLIANT g Ease of Paralleling Q (nC) 9.0 gs Q (nC) 32 Simple Drive Requirements gd Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation S D levels to approximately 50 W. The low thermal resistance G S and low package cost of the TO-220AB contribute to its N-Channel MOSFET wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF740PbF Lead (Pb)-free SiHF740-E3 IRF740 SnPb SiHF740 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 400 DS V Gate-Source Voltage V 20 GS T = 25 C 10 C Continuous Drain Current V at 10 V I GS D T = 100 C 6.3 A C a Pulsed Drain Current I 40 DM Linear Derating Factor 1.0 W/C b Single Pulse Avalanche Energy E 520 mJ AS a Repetitive Avalanche Current I 10 A AR a Repetitive Avalanche Energy E 13 mJ AR Maximum Power Dissipation T = 25 C P 125 W C D c Peak Diode Recovery dV/dt dV/dt 4.0 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 9.1 mH, R = 25 , I = 10 A (see fig. 12). DD J g AS c. I 10 A, dI/dt 120 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91054 www.vishay.com S11-0507-Rev. C, 21-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRF740, SiHF740 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Case-to-Sink, Flat, Greased Surface R 0.50 - C/W thCS Maximum Junction-to-Case (Drain) R -1.0 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 400 - - DS GS D V V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.49 - DS DS J D V/C Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - GS(th) DS GS D 4.0 V Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 400 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 320 V, V = 0 V, T = 125 C - - DS GS J 250 b Drain-Source On-State Resistance R V = 10 V I = 6.0 A -- DS(on) GS D 0.55 b Forward Transconductance g V = 50 V, I = 6.0 A 5.8 - - fs DS D S Dynamic V = 0 V, Input Capacitance C - 1400 - GS iss Output Capacitance C -V = 25 V, 330- pF oss DS Reverse Transfer Capacitance C -120- f = 1.0 MHz, see fig. 5 rss Total Gate Charge Q -- 63 g I = 10 A, V = 320 V, D DS Gate-Source Charge Q --V = 10 V 9.0 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --32 gd Turn-On Delay Time t -14 - d(on) Rise Time t -27 - r V = 200 V, I = 10 A DD D ns Turn-Off Delay Time t -50- d(off) b R = 9.1 , R = 20 , see fig. 10 g D Fall Time t -24- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH G package and center of Internal Source Inductance L -7.5 - S die contact S Drain-Source Body Diode Characteristics MOSFET symbol Continuous Source-Drain Diode Current I -- 10 D S showing the A G integral reverse a Pulsed Diode Forward Current I -- 40 SM S p - n junction diode b Body Diode Voltage V -- SD T = 25 C, I = 10 A, V = 0 V 2.0 V J S GS Body Diode Reverse Recovery Time t - rr 370 790 ns b T = 25 C, I = 10 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - rr 3.8 8.2 C Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91054 2 S11-0507-Rev. C, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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