IPD90R1K2C3 CoolMOS Power Transistor Product Summary Features V T =25C 900 V DS J Lowest figure-of-merit R x Q ON g R T =25C 1.2 DS(on),max J Extreme dv/dt rated Q 28 nC g,typ High peak current capability Fully qualified according to JEDEC for Industrial Applications a) Pb-free lead plating RoHS compliant,available in Halogen free mold compound Ultra low gate charge PG-TO252 CoolMOS 900V is designed for: Quasi Resonant Flyback / Forward topologies PC Silverbox and consumer applications Industrial SMPS Type Package Marking IPD90R1K2C3 PG-TO252 9R1K2C Maximum ratings, at T =25 C, unless otherwise specified J Value Parameter Symbol Conditions Unit Continuous drain current I T =25 C 5.1 A D C T =100 C 3.2 C 2) 10 I T =25 C Pulsed drain current D,pulse C E I =0.92 A, V =50 V Avalanche energy, single pulse 68 mJ AS D DD 2),3) E I =0.92 A, V =50 V 0.31 Avalanche energy, repetitive t AR D DD AR 2),3) I 0.92 Avalanche current, repetitive t A AR AR MOSFET dv /dt ruggedness dv /dt V =0...400 V 50 V/ns DS V 20 Gate source voltage static V GS AC (f>1 Hz) 30 P T =25 C 83 Power dissipation W tot C Operating and storage temperature T , T -55 ... 150 C J stg a) non-Halogen free (OPN: IPD90R1K2C3BT) Halogen free (OPN: IPD90R1K2C3AT) Rev. 2.1 page 1 2020-05-12 IPD90R1K2C3 Maximum ratings, at T =25 C, unless otherwise specified J Parameter Symbol Conditions Value Unit Continuous diode forward current I 2.8 A S T =25 C C 2) I Diode pulse current 11 S,pulse 4) dv/dt 4 V/ns Reverse diode dv/dt Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R - - 1.5 K/W thJC Thermal resistance, junction - R leaded - - 62 thJA ambient Soldering temperature, 1.6 mm (0.063 in.) T - - 260 C sold wavesoldering only allowed at leads from case for 10 s Electrical characteristics, at T =25 C, unless otherwise specified J Static characteristics V V =0 V, I =250 A Drain-source breakdown voltage 900 - - V (BR)DSS GS D V V =V , I =0.31 mA Gate threshold voltage 2.5 3 3.5 GS(th) DS GS D V =900 V, V =0 V, DS GS I Zero gate voltage drain current -- 1A DSS T =25 C j V =900 V, V =0 V, DS GS -10- T =150 C j I V =20 V, V =0 V Gate-source leakage current - - 100 nA GSS GS DS V =10 V, I =2.8 A, GS D R Drain-source on-state resistance - 0.94 1.2 DS(on) T =25 C j V =10 V, I =2.8 A, GS D - 2.5 - T =150 C j R Gate resistance f =1 MHz, open drain - 1.3 - G Rev. 2.1 page 2 2020-05-12