X-On Electronics has gained recognition as a prominent supplier of IRF740SPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF740SPBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF740SPBF Vishay

Hot IRF740SPBF electronic component of Vishay
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Part No.IRF740SPBF
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET N-Chan 400V 10 Amp
Datasheet: IRF740SPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.9042 ea
Line Total: USD 1.9 
Availability - 4
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 1.9042
10 : USD 1.6595
50 : USD 1.4129
100 : USD 1.2562
500 : USD 1.1854
1000 : USD 1.1548

1455
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 2.387
10 : USD 1.628
100 : USD 1.507
250 : USD 1.496
500 : USD 1.287
1000 : USD 1.232
10000 : USD 1.221

185
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 3.304
10 : USD 2.296
12 : USD 1.428
33 : USD 1.358
1000 : USD 1.33

754
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 6
Multiples : 1
6 : USD 1.415
100 : USD 1.412

   
Manufacturer
Product Category
Transistor Polarity
Packaging
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Alternate Case Style
Current Id Max
Current Temperature
External Depth
External Length / Height
External Width
Full Power Rating Temperature
Junction To Case Thermal Resistance A
No. Of Transistors
Operating Temperature Min
Power Dissipation On 1Xquot Sq. Pcb
Pulse Current Idm
Smd Marking
Termination Type
Voltage Vds
Voltage Vds Typ
Voltage Vgs Max
Voltage Vgs Rds On Measurement
Voltage Vgs Th Max
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We are delighted to provide the IRF740SPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF740SPBF and other electronic components in the MOSFETs category and beyond.

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IRF740S, SiHF740S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition V (V) 400 DS Surface Mount R ( )V = 10 V 0.55 DS(on) GS Available in Tape and Reel Q (Max.) (nC) 63 g Dynamic dV/dt Rating Q (nC) 9.0 gs Repetitive Avalanche Rated Fast Switching Q (nC) 32 gd Ease of Paralleling Configuration Single Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC D 2 D PAK (TO-263) DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G 2 The D PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provides D G the highest power capability and the lowest possible S on-resistance in any existing surface mount package. The S 2 D PAK (TO-263) is suitable for high current applications N-Channel MOSFET because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. ORDERING INFORMATION 2 2 2 Package D PAK (TO-263) D PAK (TO-263) D PAK (TO-263) a a Lead (Pb)-free and Halogen-free SiHF740S-GE3 SiHF740STRL-GE3 SiHF740STRR-GE3 a a IRF740SPbF IRF740STRLPbF IRF740STRRPbF Lead (Pb)-free a a SiHF740S-E3 SiHF740STL-E3 SiHF740STR-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 400 DS V Gate-Source Voltage V 20 GS T = 25 C 10 C Continuous Drain Current V at 10 V I GS D T = 100 C 6.3 A C a Pulsed Drain Current I 40 DM Linear Derating Factor 1.0 W/C e Linear Derating Factor (PCB Mount) 0.025 b Single Pulse Avalanche Energy E 520 mJ AS a Avalanche Current I 10 A AR a Repetitive Avalanche Energy E 13 mJ AR Maximum Power Dissipation T = 25 C 125 C P W D e Maximum Power Dissipation (PCB Mount) T = 25 C 3.1 A c Peak Diode Recovery dV/dt dV/dt 4.0 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 9.1 mH, R = 25 , I = 10 A (see fig. 12). DD J g AS c. I 10A, dI/dt 120 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91055 www.vishay.com S11-1049-Rev. C, 30-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRF740S, SiHF740S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Maximum Junction-to-Ambient R -40 C/W thJA a (PCB Mount) Maximum Junction-to-Case (Drain) R -1.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = 250 A 400 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.49 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 400 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 320 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 6.0 A - - 0.55 DS(on) GS D b Forward Transconductance g V = 50 V, I = 6.0 A 5.8 - - S fs DS D Dynamic Input Capacitance C - 1400 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 330- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -120- rss Total Gate Charge Q -- 63 g I = 10 A, V = 320 V, D DS Gate-Source Charge Q --V = 10 V 9.0 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --32 gd Turn-On Delay Time t -14 - d(on) Rise Time t -27 - r V = 200 V, I = 10 A, DD D ns b R = 9.1 , R = 20 , see fig. 10 g D Turn-Off Delay Time t -50- d(off) Fall Time t -24- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH G package and center of Internal Source Inductance L -7.5 - S die contact S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 10 S showing the A integral reverse G a p - n junction diode Pulsed Diode Forward Current I -- 40 SM S b Body Diode Voltage V T = 25 C, I = 10 A, V = 0 V -- 2.0 V SD J S GS Body Diode Reverse Recovery Time t - 370 790 ns rr b T = 25 C, I = 10 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -3.8 8.2 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91055 2 S11-1049-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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