X-On Electronics has gained recognition as a prominent supplier of IRF740APBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF740APBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF740APBF Vishay

Hot IRF740APBF electronic component of Vishay
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See Product Specifications
Part No.IRF740APBF
Manufacturer: Vishay
Category: MOSFETs
Description: N-Channel 400 V 10A (Tc) 125W (Tc) Through Hole TO-220AB
Datasheet: IRF740APBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
8: USD 0.8761 ea
Line Total: USD 7.01 
Availability - 1277
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ: 8  Multiples: 1
Pack Size: 1
Availability Price Quantity
800
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 40
Multiples : 1
40 : USD 0.8125
75 : USD 0.8125
250 : USD 0.8125
750 : USD 0.8125
2500 : USD 0.8125

921
Ship by Fri. 22 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 2.2175
10 : USD 1.9168
30 : USD 1.7292
100 : USD 1.5378
500 : USD 1.4516
1000 : USD 1.4132

966
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 2.231
10 : USD 1.2995
100 : USD 1.219
250 : USD 1.1431
1000 : USD 1.1339
5000 : USD 1.1029
10000 : USD 1.0948

524
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 2.254
10 : USD 1.764
14 : USD 1.288
38 : USD 1.218

145
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 40
Multiples : 1
40 : USD 1.04
50 : USD 1.0352
100 : USD 1.0319

1277
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 8
Multiples : 1
8 : USD 0.8761
10 : USD 0.8124
100 : USD 0.8031
250 : USD 0.7873
1000 : USD 0.7844
5000 : USD 0.7718
10000 : USD 0.7692

1568
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 11
Multiples : 1
11 : USD 1.8413
100 : USD 1.7148
250 : USD 1.5883
1000 : USD 1.5743
5000 : USD 1.5322
10000 : USD 1.504

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IRF740APBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF740APBF and other electronic components in the MOSFETs category and beyond.

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IRF740A, SiHF740A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Q Results in Simple Drive g V (V) 400 DS Requirement Available R ( )V = 10 V 0.55 DS(on) GS Improved Gate, Avalanche and Dynamic dV/dt RoHS* Q (Max.) (nC) 36 g COMPLIANT Ruggedness Q (nC) 9.9 gs Fully Characterized Capacitance and Avalanche Voltage Q (nC) 16 gd and Current Configuration Single Effective C Specified oss Compliant to RoHS Directive 2002/95/EC D TO-220AB APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptable Power Supply G High Speed Power Switching S TYPICAL SMPS TOPOLOGIES D G S Single Transistor Flyback Xfmr. Reset N-Channel MOSFET Single Transistor Forward Xfmr. Reset (Both for US Line Input Only) ORDERING INFORMATION Package TO-220AB IRF740APbF Lead (Pb)-free SiHF740A-E3 IRF740A SnPb SiHF740A ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 400 DS V Gate-Source Voltage V 30 GS T = 25 C 10 C Continuous Drain Current V at 10 V I GS D T = 100 C 6.3 A C a Pulsed Drain Current I 40 DM Linear Derating Factor 1.0 W/C b Single Pulse Avalanche Energy E 630 mJ AS a Repetitive Avalanche Current I 10 A AR a Repetitive Avalanche Energy E 12.5 mJ AR Maximum Power Dissipation T = 25 C P 125 W C D c Peak Diode Recovery dV/dt dV/dt 5.9 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 12.6 mH, R = 25 , I = 10 A (see fig. 12). DD J g AS c. I 10 A, dV/dt 330 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91051 www.vishay.com S11-0508-Rev. C, 21-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRF740A, SiHF740A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Case-to-Sink, Flat, Greased Surface R 0.50 - C/W thCS Maximum Junction-to-Case (Drain) R -1.0 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 400 - - DS GS D V V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.48 - DS DS J D V/C Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - V GS(th) DS GS D 4.0 Gate-Source Leakage I V = 30 V - - 100 nA GSS GS V = 400 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 320 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 6.0 A -- 0.55 DS(on) GS D b Forward Transconductance g V = 50 V, I = 6.0 A 4.9 - - S fs DS D Dynamic Input Capacitance C - 1030 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 170- oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -7.7- rss pF V = 0 V, V = 1.0 V, f = 1.0 MHz - 1490 - GS DS Output Capacitance C oss V = 0 V, V = 320 V, f = 1.0 MHz - 52 - GS DS Effective Output Capacitance C V = 0 V, V = 0 V to 320 V - 61 - oss GS DS Total Gate Charge Q -- 36 g I = 10 A, V = 320 V, D DS Gate-Source Charge Q --V = 10 V 9.9 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --16 gd Turn-On Delay Time t -10 - d(on) Rise Time t -35 - r V = 200 V, I = 10 A, DD D ns b Turn-Off Delay Time t -2R = 10 , R = 19.5 , see fig. 104- d(off) g D Fall Time t -22- f Drain-Source Body Diode Characteristics D MOSFET symbol Continuous Source-Drain Diode Current I -- 10 S showing the A G integral reverse a Pulsed Diode Forward Current I -- 40 SM S p - n junction diode b Body Diode Voltage V T = 25 C, I = 10 A, V = 0 V -- 2.0 V SD J S GS Body Diode Reverse Recovery Time t - 240 360 ns rr b T = 25 C, I = 10 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -1.9 2.9 C rr Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) Forward Turn-On Time t on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91051 2 S11-0508-Rev. C, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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