IRF740LC, SiHF740LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge V (V) 400 DS Reduced Gate Drive Requirement Available R ()V = 10 V 0.55 DS(on) GS Enhanced 30 V V Rating GS RoHS* COMPLIANT Q (Max.) (nC) 39 g Reduced C , C , C iss oss rss Q (nC) 10 gs Extremely High Frequency Operation Q (nC) 19 Repetitive Avalanche Rated gd Compliant to RoHS Directive 2002/95/EC Configuration Single D DESCRIPTION This new series of low charge Power MOSFETs achieve TO-220AB significantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, G allowing for reduced gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency are achievable in a variety of high S frequency applications. Frequencies of a few MHz at high D G S current are possible using the new Low Charge MOSFETs. N-Channel MOSFET These device improvements combined with the proven ruggedness and reliability that are characteristic of Power MOSFETs ofter the designer a new standard in power transistors for switching applications. ORDERING INFORMATION Package TO-220AB IRF740LCPbF Lead (Pb)-free SiHF740LC-E3 IRF740LC SnPb SiHF740LC ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 400 DS V Gate-Source Voltage V 30 GS T = 25 C 10 C Continuous Drain Current V at 10 V I GS D T = 100 C 6.3 A C a Pulsed Drain Current I 32 DM Linear Derating Factor 1.0 W/C b Single Pulse Avalanche Energy E 520 mJ AS a Repetitive Avalanche Current I 10 A AR a Repetitive Avalanche Energy E 13 mJ AR Maximum Power Dissipation T = 25 C P 125 W C D c Peak Diode Recovery dV/dt dV/dt 4.0 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 9.1 mH, R = 25 , I = 10 A (see fig. 12). DD J g AS c. I 10 A, dI/dt 120 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91053 www.vishay.com S11-0507-Rev. B, 21-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRF740LC, SiHF740LC Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Case-to-Sink, Flat, Greased Surface R 0.50 - C/W thCS Maximum Junction-to-Case (Drain) R -1.0 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 400 - - DS GS D V V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.76 - DS DS J D V/C Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - GS(th) DS GS D 4.0 V Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 400 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 320 V, V = 0 V, T = 125 C - - DS GS J 250 b Drain-Source On-State Resistance R V = 10 V I = 6.0 A -- DS(on) GS D 0.55 b Forward Transconductance g V = 50 V, I = 6.0 A 3.0 - - fs DS D S Dynamic V = 0 V, Input Capacitance C - 1100 - GS iss Output Capacitance C -V = 25 V, 190- pF oss DS Reverse Transfer Capacitance C -18- f = 1.0 MHz, see fig. 5 rss Total Gate Charge Q -- 39 g I = 10 A, V = 320 V D DS Gate-Source Charge Q --V = 10 V 10 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --19 gd Turn-On Delay Time t -11 - d(on) Rise Time t -31 - r V = 200 V, I = 10 A , DD D ns b Turn-Off Delay Time t -2R = 9.1 , R = 20 , see fig. 105- d(off) g D Fall Time t -20- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L die contact -7.5 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 10 S showing the A integral reverse G a Pulsed Diode Forward Current I -- 32 SM p - n junction diode S b Body Diode Voltage V -- SD T = 25 C, I = 10 A, V = 0 V 2.0 V J S GS Body Diode Reverse Recovery Time t - rr 380 570 ns b T = 25 C, I = 10 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - rr 2.8 4.2 C Forward Turn-On Time t on Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91053 2 S11-0507-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000