IPG20N04S4L-08 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS 4) 8.2 mW R DS(on),max I 20 A D Features Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPG20N04S4L-08 PG-TDSON-8-4 4N04L08 Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current 1) I T =25 C, V =10 V 20 A D C GS one channel active T =100 C, C 20 2) V =10 V GS 2) Pulsed drain current I - 80 D,pulse one channel active 2, 4) E I =10A 145 mJ Avalanche energy, single pulse AS D 4) I - 15 A Avalanche current, single pulse AS V Gate source voltage - 16 V GS Power dissipation P T =25 C 54 W tot C one channel active T , T Operating and storage temperature - -55 ... +175 C j stg Rev. 1.0 page 1 2010-10-05IPG20N04S4L-08 Parameter Symbol Conditions Values Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R - - - 2.8 K/W thJC R SMD version, device on PCB minimal footprint - 100 - thJA 2 3) - 60 - 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I = 1 mA Drain-source breakdown voltage 40 - - V (BR)DSS GS D V V =V , I = 22A Gate threshold voltage 1.2 1.7 2.2 GS(th) DS GS D V =40 V, V =0 V, DS GS 4) I - 0.01 1 A Zero gate voltage drain current DSS T =25 C j V =18 V, V =0 V, DS GS - 1 100 2) T =85 C j 4) I V =16 V, V =0 V - - 100 nA Gate-source leakage current GSS GS DS 4) R V =4.5 V, I =10 A - 9.2 10.9 mW Drain-source on-state resistance DS(on) GS D V =10 V, I =17A - 7.2 8.2 GS D Rev. 1.0 page 2 2010-10-05