CPC3909ZTR IXYS

CPC3909 400V N-Channel Depletion-Mode FET INTEGRATED CIRCUITS DIVISION PRELIMINARY Parameter Rating Units Description The CPC3909 is an N-channel, depletion mode Field Drain-to-Source Voltage - V 400 V (BR)DSX Effect Transistor (FET) that is available in an Max On-Resistance - R 9 DS(on) SOT-223 package (CPC3909Z) and an SOT-89 Max Power package (CPC3909C). Both utilize IXYS Integrated SOT-89 Package 1.1 Circuits Divisions proprietary third-generation W SOT-223 Package 2.5 vertical DMOS process that realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process Features yields a highly reliable device, particularly for 400V Drain-to-Source Voltage use in difficult application environments such as Depletion Mode Device Offers Low R DS(on) telecommunications, security, and power supplies. at Cold Temperatures CPC3909Z and the CPC3909C have a typical Low On-Resistance: 4.5 (Typical) 25C on-resistance of 4.5 and a drain-to-source voltage Low V Voltage GS(off) of 400V. As with all MOS devices, the FET structure High Input Impedance prevents thermal runaway and thermally induced Low Input and Output Leakage secondary breakdown. Small Package Size SOT-89 and SOT-223 PC Card (PCMCIA) Compatible PCB Space and Cost Savings Ordering Information Part Number Description Applications CPC3909CTR SOT-89: Tape and Reel (1000/Reel) LED Drive Circuits CPC3909ZTR SOT-223: Tape and Reel (1000/Reel) Telecommunications Normally On Switches Ignition Modules Converters Security Power Supplies Regulators Circuit Symbol Package Pinout: D D G 4 123 S G D S Pin Number Name 1GATE 2 DRAIN 3 SOURCE 4 DRAIN DS-CPC3909-R00C 1 PRELIMINARYCPC3909 INTEGRATED CIRCUITS DIVISION PRELIMINARY Absolute Maximum Ratings 25C Absolute Maximum Ratings are stress ratings. Stresses in Parameter Ratings Units excess of these ratings can cause permanent damage to the Drain-to-Source Voltage (V ) 400 V (BR)DSX device. Functional operation of the device at conditions beyond Gate-to-Source Voltage (V)15 V GS those indicated in the operational sections of this data sheet is 1 Total Package Dissipation not implied. SOT-89 1.1 W SOT-223 2.5 o Operational Temperature -40 to +110 C o Storage Temperature -40 to +125 C 1 Mounted on 1 x1 FR4 board. o Electrical Characteristics 25 C (Unless Otherwise Specified) Parameter Symbol Conditions Min Typ Max Units Gate-to-Source Off Voltage V I =2A, V =10V, V =100V -0.9 - -3.1 V GS(off) D DS DS V = -5V, V =210V - - 20 nA GS DS Drain-to-Source Leakage Current I DS(off) V = -5V, V =400V - - 1 A GS DS Drain Current I V = 0V, V =5V 300 - - mA D GS DS On-Resistance R V = 0V, I =300mA - 4.5 9 DS(on) GS DS Gate Leakage Current I V =15V - - 100 nA GSS GS Gate Capacitance C V = V =0V - - TBD pF ISS DS GS Thermal Resistance Package Parameter Symbol Conditions Min Typ Max Units SOT-89 Junction to Case R 50 JC -- - Junction to Ambient R 90 JA C/W SOT-223 Junction to Case R 14 JC -- - Junction to Ambient R 55 JA R00C 2 PRELIMINARY