X-On Electronics has gained recognition as a prominent supplier of TK28N65W5,S1F MOSFETs across the USA, India, Europe, Australia, and various other global locations. TK28N65W5,S1F MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TK28N65W5,S1F Toshiba

TK28N65W5,S1F electronic component of Toshiba
TK28N65W5,S1F Toshiba
TK28N65W5,S1F MOSFETs
TK28N65W5,S1F  Semiconductors

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See Product Specifications
Part No. TK28N65W5,S1F
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET TO-247OS PD=230W 1MHz PWR MOSFET TRNS
Datasheet: TK28N65W5,S1F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 7.1625 ea
Line Total: USD 7.16 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 7.1625
10 : USD 6.193
30 : USD 3.938
60 : USD 3.927
120 : USD 3.454
510 : USD 3.289

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the TK28N65W5,S1F from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TK28N65W5,S1F and other electronic components in the MOSFETs category and beyond.

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TK28N65W5 MOSFETs Silicon N-Channel MOS (DTMOS) TK28N65W5TK28N65W5TK28N65W5TK28N65W5 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Fast reverse recovery time: t = 115 ns (typ.) rr (2) Low drain-source on-resistance: R = 0.11 (typ.) DS(ON) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: V = 3 to 4.5 V (V = 10 V, I = 1.6 mA) th DS D 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-247 Start of commercial production 2013-09 2014-02-25 1 Rev.3.0TK28N65W5 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 650 V DSS Gate-source voltage V 30 GSS Drain current (DC) (Note 1) I 27.6 A D Drain current (pulsed) (Note 1) I 110 DP Power dissipation (T = 25) P 230 W c D Single-pulse avalanche energy (Note 2) E 444 mJ AS Avalanche current I 7 A AR Reverse drain current (DC) (Note 1) I 27.6 DR Reverse drain current (pulsed) (Note 1) I 110 DRP Channel temperature T 150 ch Storage temperature T -55 to 150 stg Mounting torque TOR 0.8 Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. 5. Thermal CharacteristicsThermal Characteristics 5. 5. Thermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 0.543 /W th(ch-c) Channel-to-ambient thermal resistance R 50 th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: V = 90 V, T = 25 (initial), L = 16 mH, R = 25 , I = 7 A DD ch G AR Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2014-02-25 2 Rev.3.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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