X-On Electronics has gained recognition as a prominent supplier of TK3R2A10PL,S4X MOSFETs across the USA, India, Europe, Australia, and various other global locations. TK3R2A10PL,S4X MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TK3R2A10PL,S4X Toshiba

TK3R2A10PL,S4X electronic component of Toshiba
TK3R2A10PL,S4X Toshiba
TK3R2A10PL,S4X MOSFETs
TK3R2A10PL,S4X  Semiconductors

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See Product Specifications
Part No. TK3R2A10PL,S4X
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET TO-220SIS PD=54W 1MHz PWR MOSFET TRNS
Datasheet: TK3R2A10PL,S4X Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.95 ea
Line Total: USD 3.95 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 08 Apr to Thu. 10 Apr
MOQ : 1
Multiples : 1
1 : USD 3.95
10 : USD 3.4155
50 : USD 1.848
100 : USD 1.76
250 : USD 1.727
500 : USD 1.694
1000 : USD 1.617

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the TK3R2A10PL,S4X from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TK3R2A10PL,S4X and other electronic components in the MOSFETs category and beyond.

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TK3R2A10PL MOSFETs Silicon N-channel MOS (U-MOS-H) TK3R2A10PL 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: Q = 48 nC (typ.) SW (3) Small output charge: Q = 164 nC (typ.) oss (4) Low drain-source on-resistance: R = 2.6 m (typ.) (V = 10 V) DS(ON) GS (5) Low leakage current: I = 10 A (max) (V = 100 V) DSS DS (6) Enhancement mode: V = 1.5 to 2.5 V (V = 10 V, I = 1 mA) th DS D 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS Start of commercial production 2018-01 2017-2021 2021-01-27 1 Toshiba Electronic Devices & Storage Corporation Rev.2.0TK3R2A10PL 4. Absolute Maximum Ratings (Note) (T = 25 unless otherwise specified) a Characteristics Symbol Rating Unit Drain-source voltage V 100 V DSS Gate-source voltage V 20 GSS Drain current (DC) (T = 25 ) (Note 1) I 100 A c D Drain current (DC) (Silicon limit) (Note 1), (Note 2) I 106 A D Drain current (pulsed) (t = 100 s) (Note 1) I 500 A DP Power dissipation (T = 25 ) P 54 W c D Single-pulse avalanche energy (Note 3) E 278 mJ AS Single-pulse avalanche current (Note 3) I 86 A AS Channel temperature T 175 ch Storage temperature T -55 to 175 stg Isolation voltage (RMS) (t = 1.0 s) V 2000 V ISO(RMS) Mounting torque TOR 0.6 Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. Thermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance (T = 25 ) R 2.77 /W c th(ch-c) Channel-to-ambient thermal resistance (T = 25 ) R 62.5 a th(ch-a) Note 1: Ensure that the channel temperature does not exceed 175 . Note 2: Limited 100 A by package capability. Note 3: V = 80 V, T = 25 (initial), L = 29 H, I = 86 A DD ch AS Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2017-2021 2021-01-27 2 Toshiba Electronic Devices & Storage Corporation Rev.2.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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