X-On Electronics has gained recognition as a prominent supplier of TK4P60D,RQ MOSFETs across the USA, India, Europe, Australia, and various other global locations. TK4P60D,RQ MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TK4P60D,RQ Toshiba

TK4P60D,RQ electronic component of Toshiba
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See Product Specifications
Part No.TK4P60D,RQ
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET PWR MOSFET V=600 PD=80W
Datasheet: TK4P60D,RQ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2000: USD 0.4154 ea
Line Total: USD 830.8 
Availability - 0
MOQ: 2000  Multiples: 2000
Pack Size: 2000
Availability Price Quantity
0
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 2000
Multiples : 2000
2000 : USD 0.4607
4000 : USD 0.4562
6000 : USD 0.4516
10000 : USD 0.4471
12000 : USD 0.4426
20000 : USD 0.4381
30000 : USD 0.4338
50000 : USD 0.4294
100000 : USD 0.4251

0
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 2000
Multiples : 2000
2000 : USD 0.4154

0
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 2.6464
10 : USD 0.9785
100 : USD 0.731
250 : USD 0.7098
500 : USD 0.5694
1000 : USD 0.4725
2000 : USD 0.4569

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the TK4P60D,RQ from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TK4P60D,RQ and other electronic components in the MOSFETs category and beyond.

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TK4P60D MOSFETs Silicon N-Channel MOS (-MOS) TK4P60DTK4P60DTK4P60DTK4P60D 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Low drain-source on-resistance: R = 1.4 (typ.) DS(ON) (2) High forward transfer admittance: Y = 2.5 S (typ.) fs (3) Low leakage current: I = 10 A (max) (V = 600 V) DSS DS (4) Enhancement mode: V = 2.4 to 4.4 V (V = 10 V, I = 1 mA) th DS D 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Gate (G) 2: Drain (D)(Heatsink) 3: Source (S) DPAK 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 600 V DSS Gate-source voltage V 30 GSS Drain current (DC) (Note 1) I 4 A D Drain current (pulsed) (Note 1) I 16 DP Power dissipation (T = 25) P 100 W c D Single-pulse avalanche energy (Note 2) E 158 mJ AS Avalanche current (Note 3) I 4 A AR Reverse drain current (DC) (Note 1) I 4 DR Reverse drain current (pulsed) (Note 1) I 16 DRP Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2012-01 2014-01-06 1 Rev.2.0TK4P60D 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 1.25 /W th(ch-c) Channel-to-ambient thermal resistance R 125 th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: V = 90 V, T = 25 (initial), L = 17.3 mH, R = 25 , I = 4 A DD ch G AR Note 3: Repetitive rating pulse width limited by maximum channel temperature Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2014-01-06 2 Rev.2.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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TOSHIBA SEMICONDUCTORS
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