TK4R3E06PL,S1X Toshiba

TK4R3E06PL MOSFETs Silicon N-channel MOS (U-MOS-H) TK4R3E06PL 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: Q = 15.1 nC (typ.) SW (3) Small output charge: Q = 39 nC (typ.) oss (4) Low drain-source on-resistance: R = 3.3 m (typ.) (V = 10 V) DS(ON) GS (5) Low leakage current: I = 10 A (max) (V = 60 V) DSS DS (6) Enhancement mode: V = 1.5 to 2.5 V (V = 10 V, I = 0.5 mA) th DS D 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-220 Start of commercial production 2016-10 2016-2021 2021-01-20 1 Toshiba Electronic Devices & Storage Corporation Rev.3.0TK4R3E06PL 4. Absolute Maximum Ratings (Note) (T = 25 unless otherwise specified) a Characteristics Symbol Rating Unit Drain-source voltage V 60 V DSS Gate-source voltage V 20 GSS Drain current (DC) (T = 25 ) (Note 1) I 80 A c D Drain current (DC) (Silicon limit) (Note 1), (Note 2) I 106 D Drain current (pulsed) (t = 100 s) (Note 1) I 350 DP Power dissipation (T = 25 ) P 87 W c D Single-pulse avalanche energy (Note 3) E 29 mJ AS Single-pulse avalanche current (Note 3) I 80 A AS Channel temperature T 175 ch Storage temperature T -55 to 175 stg Mounting torque TOR 0.6 Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. Thermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance (T = 25 ) R 1.72 /W c th(ch-c) Channel-to-ambient thermal resistance (T = 25 ) R 83.3 a th(ch-a) Note 1: Ensure that the channel temperature does not exceed 175 . Note 2: Limited by silicon chip capability. Note 3: V = 48 V, T = 25 (initial), L = 3.5 H, I = 80 A DD ch AS Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2016-2021 2021-01-20 2 Toshiba Electronic Devices & Storage Corporation Rev.3.0