TK55S10N1,LQ Toshiba

TK55S10N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK55S10N1TK55S10N1TK55S10N1TK55S10N1 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Automotive Switching Voltage Regulators Motor Drivers 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) AEC-Q101 qualified (2) Low drain-source on-resistance: R = 5.5 m (typ.) (V = 10 V) DS(ON) GS (3) Low leakage current: I = 10 A (max) (V = 100 V) DSS DS (4) Enhancement mode: V = 2.0 to 4.0 V (V = 10 V, I = 0.5 mA) th DS D 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK+ 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 unless otherwise specified) unless otherwise specified) 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 unless otherwise specified) unless otherwise specified) a aaa Characteristics Symbol Rating Unit Drain-source voltage V 100 V DSS Gate-source voltage V 20 GSS Drain current (DC) (Note 1) I 55 A D Drain current (pulsed) (Note 1) I 165 DP Power dissipation (T = 25) (Note 2) P 157 W c D Single-pulse avalanche energy (Note 3) E 93 mJ AS Single-pulse avalanche current I 55 A AS Channel temperature (Note 4) T 175 ch Storage temperature (Note 4) T -55 to 175 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2013-02 2020 2020-06-24 1 Toshiba Electronic Devices & Storage Corporation Rev.7.0TK55S10N1 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 0.95 /W th(ch-c) Note 1: Ensure that the channel temperature does not exceed 175 . Note 2: The power dissipation value is calculated based on the channel-to-case thermal resistance. However, the safe operating area is not only limited to thermal limits but also the current concentration phenomenon. This device should not be used under conditions outside its safe operating area shown herein. Note 3: V = 80 V, T = 25 (initial), L = 24 H, R = 25 , I = 55 A DD ch G AS Note 4: The definitions of the absolute maximum channel and storage temperatures are qualified per AEC-Q101. Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2020 2020-06-24 2 Toshiba Electronic Devices & Storage Corporation Rev.7.0