X-On Electronics has gained recognition as a prominent supplier of TK50P04M1(T6RSS-Q) MOSFETs across the USA, India, Europe, Australia, and various other global locations. TK50P04M1(T6RSS-Q) MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TK50P04M1(T6RSS-Q) Toshiba

TK50P04M1(T6RSS-Q) electronic component of Toshiba
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Part No.TK50P04M1(T6RSS-Q)
Manufacturer: Toshiba
Category: MOSFETs
Description: N-Channel 40 V 50A (Ta) 60W (Tc) Surface Mount D-Pak
Datasheet: TK50P04M1(T6RSS-Q) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Availability Price Quantity
0
MOQ : 2000
Multiples : 2000
2000 : USD 0.478
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0
MOQ : 1
Multiples : 1
1 : USD 1.2324
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0
MOQ : 1
Multiples : 1
1 : USD 2.3274
10 : USD 0.8561
100 : USD 0.6383
500 : USD 0.5184
1000 : USD 0.4266
2000 : USD 0.3899
N/A

   
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RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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We are delighted to provide the TK50P04M1(T6RSS-Q) from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TK50P04M1(T6RSS-Q) and other electronic components in the MOSFETs category and beyond.

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TK50P04M1 MOSFETs Silicon N-Channel MOS (U-MOS-H) TK50P04M1TK50P04M1TK50P04M1TK50P04M1 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Switching Voltage Regulators Motor Drivers Power Management Switches 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) High-speed switching (2) Low gate charge: Q = 9.4 nC (typ.) SW (3) Low drain-source on-resistance: R = 6.7 m (typ.) (V = 10 V) DS(ON) GS (4) Low leakage current: I = 10 A (max) (V = 40 V) DSS DS (5) Enhancement mode: V = 1.3 to 2.3 V (V = 10 V, I = 0.5 mA) th DS D 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK Start of commercial production 2009-02 2016 Toshiba Corporation 2016-02-17 1 Rev.5.0TK50P04M1 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 40 V DSS Gate-source voltage V 20 GSS Drain current (DC) (Note 1) I 50 A D Drain current (pulsed) (Note 1) I 150 DP Power dissipation (T = 25) P 60 W c D Single-pulse avalanche energy (Note 2) E 65 mJ AS Single-pulse avalanche current I 50 A AS Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. 5. Thermal CharacteristicsThermal Characteristics 5. 5. Thermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 2.08 /W th(ch-c) Channel-to-ambient thermal resistance R 125 th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: V = 32 V, T = 25 (initial), L = 20 H, R = 1.2 , I = 50 A DD ch G AS Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2016 Toshiba Corporation 2016-02-17 2 Rev.5.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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