X-On Electronics has gained recognition as a prominent supplier of TK65G10N1,RQ MOSFETs across the USA, India, Europe, Australia, and various other global locations. TK65G10N1,RQ MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TK65G10N1,RQ Toshiba

TK65G10N1,RQ electronic component of Toshiba
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Part No.TK65G10N1,RQ
Manufacturer: Toshiba
Category: MOSFETs
Description: Toshiba MOSFET UMOSVIII 100V 4.5m max(VGS=10V) D2PAK
Datasheet: TK65G10N1,RQ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1000
Multiples : 1000
1000 : USD 2.0606
2000 : USD 2.0399
3000 : USD 2.0195
4000 : USD 1.9994
5000 : USD 1.9793
6000 : USD 1.9596
10000 : USD 1.94
20000 : USD 1.9206
50000 : USD 1.9013
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 7.83
10 : USD 2.8296
25 : USD 2.6676
100 : USD 2.2788
500 : USD 1.8684
1000 : USD 1.5444
2000 : USD 1.404
5000 : USD 1.35
N/A

Obsolete
0
MOQ : 17
Multiples : 20
17 : USD 1.1588
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Series
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TK65G10N1,RQ from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TK65G10N1,RQ and other electronic components in the MOSFETs category and beyond.

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TK65G10N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK65G10N1TK65G10N1TK65G10N1TK65G10N1 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Low drain-source on-resistance: R = 3.8 m (typ.) (V = 10 V) DS(ON) GS (2) Low leakage current: I = 10 A (max) (V = 100 V) DSS DS (3) Enhancement mode: V = 2.0 to 4.0 V (V = 10 V, I = 1.0 mA) th DS D 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain 3: Source D2PAK Start of commercial production 2013-08 2014-06-30 1 Rev.4.0TK65G10N1 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 100 V DSS Gate-source voltage V 20 GSS Drain current (DC) (Silicon limit) (Note 1, 2) I 136 A D Drain current (DC) (Note 1, 3) I 65 D Drain current (pulsed) (t = 1 ms) (Note 1) I 283 DP Power dissipation (T = 25) P 156 W c D Single-pulse avalanche energy (Note 4) E 93 mJ AS Avalanche current I 65 A AR Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. 5. Thermal CharacteristicsThermal Characteristics 5. 5. Thermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 0.8 /W th(ch-c) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Limited by silicon chip capability. Package limit is 100 A. Note 3: Device mounted with heatsink so that R becomes 2.77/W. th(ch-a) Note 4: V = 80 V, T = 25 (initial), L = 17.1 H, I = 65 A DD ch AR Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2014-06-30 2 Rev.4.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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