X-On Electronics has gained recognition as a prominent supplier of TK6P65W,RQ MOSFETs across the USA, India, Europe, Australia, and various other global locations. TK6P65W,RQ MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TK6P65W,RQ Toshiba

TK6P65W,RQ electronic component of Toshiba
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Part No.TK6P65W,RQ
Manufacturer: Toshiba
Category: MOSFETs
Description: N-Channel 650 V 5.8A (Ta) 60W (Tc) Surface Mount DPAK
Datasheet: TK6P65W,RQ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2000: USD 0.7662 ea
Line Total: USD 1532.4 
Availability - 0
MOQ: 2000  Multiples: 2000
Pack Size: 2000
Availability Price Quantity
0
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 2000
Multiples : 2000
2000 : USD 0.7662
6000 : USD 0.6988
10000 : USD 0.6725

0
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 1.8056
10 : USD 1.5501
100 : USD 1.2083
500 : USD 0.9983
1000 : USD 0.7881

0
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 1.8056
10 : USD 1.5501
100 : USD 1.2083
500 : USD 0.9983
1000 : USD 0.7881

0
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 2000
Multiples : 2000
2000 : USD 0.9716
4000 : USD 0.9191
8000 : USD 0.8666
12000 : USD 0.8141
16000 : USD 0.7615

0
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 3.12
10 : USD 1.1723
100 : USD 0.8847
500 : USD 0.7521
1000 : USD 0.6173
2000 : USD 0.5761

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the TK6P65W,RQ from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TK6P65W,RQ and other electronic components in the MOSFETs category and beyond.

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TK6P65W MOSFETs Silicon N-Channel MOS (DTMOS) TK6P65WTK6P65WTK6P65WTK6P65W 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Switching Voltage Regulators 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) Low drain-source on-resistance: R = 0.89 (typ.) DS(ON) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: V = 2.5 to 3.5 V(V = 10 V, I = 0.18 mA) th DS D 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source DPAK 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 unless otherwise specified) unless otherwise specified) 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 unless otherwise specified) unless otherwise specified) aa aa Characteristics Symbol Rating Unit Drain-source voltage V 650 V DSS Gate-source voltage V 30 GSS Drain current (DC) (Note 1) I 5.8 A D Drain current (pulsed) (Note 1) I 23.2 DP Power dissipation (T = 25 ) P 60 W c D Single-pulse avalanche energy (Note 2) E 82 mJ AS Avalanche current I 1.5 A AR Reverse drain current (DC) (Note 1) I 5.8 DR Reverse drain current (pulsed) (Note 1) I 23.2 DRP Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2014-09 2015 Toshiba Corporation 2015-12-25 1 Rev.4.0TK6P65W 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 2.09 /W th(ch-c) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: V = 90 V, T = 25 (initial), L = 65.2 mH, R = 25 , I = 1.5 A DD ch G AR Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2015 Toshiba Corporation 2015-12-25 2 Rev.4.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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