X-On Electronics has gained recognition as a prominent supplier of TK6P60W,RVQ MOSFETs across the USA, India, Europe, Australia, and various other global locations. TK6P60W,RVQ MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TK6P60W,RVQ Toshiba

TK6P60W,RVQ electronic component of Toshiba
TK6P60W,RVQ Toshiba
TK6P60W,RVQ MOSFETs
TK6P60W,RVQ  Semiconductors

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See Product Specifications
Part No. TK6P60W,RVQ
Manufacturer: Toshiba
Category: MOSFETs
Description: Toshiba MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC
Datasheet: TK6P60W,RVQ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
144: USD 0.8451 ea
Line Total: USD 121.69 
Availability - 0
MOQ: 144  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 15 Apr to Mon. 21 Apr
MOQ : 2000
Multiples : 2000
2000 : USD 1.2454
4000 : USD 1.2183
10000 : USD 1.2105

0
Ship by Tue. 15 Apr to Mon. 21 Apr
MOQ : 2000
Multiples : 2000
2000 : USD 0.9573

0
Ship by Fri. 11 Apr to Tue. 15 Apr
MOQ : 1
Multiples : 1
1 : USD 2.9016
10 : USD 2.0196
100 : USD 1.3618
500 : USD 1.1384
1000 : USD 1.1171
2000 : USD 1.0639

0
Ship by Tue. 15 Apr to Mon. 21 Apr
MOQ : 99
Multiples : 1
99 : USD 1.1275

0
Ship by Tue. 15 Apr to Mon. 21 Apr
MOQ : 144
Multiples : 1
144 : USD 0.8451

0
Ship by Tue. 15 Apr to Mon. 21 Apr
MOQ : 144
Multiples : 144
144 : USD 0.8451

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
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Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the TK6P60W,RVQ from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TK6P60W,RVQ and other electronic components in the MOSFETs category and beyond.

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TK6P60W MOSFETs Silicon N-Channel MOS (DTMOS) TK6P60WTK6P60WTK6P60WTK6P60W 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Low drain-source on-resistance: R = 0.68 (typ.) DS(ON) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: V = 2.7 to 3.7 V (V = 10 V, I = 0.31 mA) th DS D 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source DPAK Start of commercial production 2012-09 2014-09-17 1 Rev.4.0TK6P60W 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 600 V DSS Gate-source voltage V 30 GSS Drain current (DC) (Note 1) I 6.2 A D Drain current (pulsed) (Note 1) I 24.8 DP Power dissipation (T = 25) P 60 W c D Single-pulse avalanche energy (Note 2) E 84 mJ AS Avalanche current I 1.6 A AR Reverse drain current (DC) (Note 1) I 6.2 DR Reverse drain current (pulsed) (Note 1) I 24.8 DRP Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. 5. Thermal CharacteristicsThermal Characteristics 5. 5. Thermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 2.09 /W th(ch-c) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: V = 90 V, T = 25 (initial), L = 57.6 mH, R = 25 , I = 1.6 A DD ch G AR Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2014-09-17 2 Rev.4.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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