X-On Electronics has gained recognition as a prominent supplier of TK28V65W,LQ MOSFETs across the USA, India, Europe, Australia, and various other global locations. TK28V65W,LQ MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TK28V65W,LQ Toshiba

TK28V65W,LQ electronic component of Toshiba
TK28V65W,LQ Toshiba
TK28V65W,LQ MOSFETs
TK28V65W,LQ  Semiconductors

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See Product Specifications
Part No. TK28V65W,LQ
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET DFN8x8-OS PD=240W 1MHz PWR MOSFET TRNS
Datasheet: TK28V65W,LQ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 3.366 ea
Line Total: USD 8415 
Availability - 0
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 2500
Multiples : 2500
2500 : USD 3.366

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the TK28V65W,LQ from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TK28V65W,LQ and other electronic components in the MOSFETs category and beyond.

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TK28V65W MOSFETs Silicon N-Channel MOS (DTMOS) TK28V65WTK28V65WTK28V65WTK28V65W 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Switching Voltage Regulators 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) Low drain-source on-resistance: R = 0.099 (typ.) DS(ON) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: V = 2.5 to 3.5 V (V = 10 V, I = 1.6 mA) th DS D 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Source1 3,4: Source2 5: Drain (Heatsink) Notice: Please use the source1 pin for gate input signal return. Make sure that the main current flows into the source2 pins. DFN8x8 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 650 V DSS Gate-source voltage V 30 GSS Drain current (DC) (Note 1) I 27.6 A D Drain current (pulsed) (Note 1) I 110 DP Power dissipation (T = 25 ) P 240 W c D Single-pulse avalanche energy (Note 2) E 347 mJ AS Avalanche current I 7 A AR Reverse drain current (DC) (Note 1) I 27.6 DR Reverse drain current (pulsed) (Note 1) I 110 DRP Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2015-12 2015 Toshiba Corporation 2015-12-25 1 Rev.3.0TK28V65W 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 0.52 /W th(ch-c) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: V = 90 V, T = 25 (initial), L = 12.56 mH, R = 25 , I = 7 A DD ch G AR Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2015 Toshiba Corporation 2015-12-25 2 Rev.3.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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