TK2Q60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS) TK2Q60D Switching Regulator Applications Unit: mm 6.5 0.2 5.2 0.2 Low drain-source ON-resistance: R = 3.2 (typ.) DS (ON) 0.6 MAX. High forward transfer admittance: Y = 1.0 S (typ.) fs Low leakage current: I = 10 A (max) (V = 600 V) DSS DS Enhancement mode: V = 2.4 to 4.4 V (V = 10 V, I = 1 mA) th DS D 1.1 0.2 0.9 0.6 MAX. Absolute Maximum Ratings (Ta = 25C) 2.3 2.3 Characteristics Symbol Rating Unit 1 2 3 Drain-source voltage V 600 V DSS Gate-source voltage V 30 V GSS 0.8 MAX. 0.6 0.15 1.1 MAX. DC (Note 1) I 2 D Drain current A 0.6 0.15 Pulse (Note 1) I 8 DP 2 1. GATE Drain power dissipation (Tc = 25C) P 60 W D 1 2. DRAIN HEAT SINK Single pulse avalanche energy E 101 mJ 3. SOURSE AS 3 (Note 2) Avalanche current I 2 A AR JEDEC Repetitive avalanche energy (Note 3) E 6.0 mJ AR JEITA Channel temperature T 150 C ch Storage temperature range T 55 to 150 C TOSHIBA 2-7J2B stg Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics 2 Characteristics Symbol Max Unit Thermal resistance, channel to case R 2.08 C/W th (ch-c) Thermal resistance, channel to ambient R 125 C/W th (ch-a) 1 Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: V = 90 V, T = 25C(initial), L = 44.1 mH, R = 25, I = 2 A DD ch G AR Note 3: Repetitive rating: pulse width limited by maximum channel temperature 3 This transistor is an electrostatic-sensitive device. Handle with care. 1 2010-08-30 4.1 0.2 1.6 2.3 0.2 5.7 1.5 0.2 5.5 0.2 TK2Q60D Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 30 V, V = 0 V 1 A GSS GS DS Drain cut-off current I V = 600 V, V = 0 V 10 A DSS DS GS Drain-source breakdown voltage V I = 10 mA, V = 0 V 600 V (BR) DSS D GS Gate threshold voltage V V = 10 V, I = 1 mA 2.4 4.4 V th DS D Drain-source ON resistance R V = 10 V, I =1 A 3.2 4.3 DS (ON) GS D Forward transfer admittance Y V = 10 V, I =1 A 0.3 1.0 S fs DS D Input capacitance C 280 iss V = 25 V, V = 0 V, f = 1 MHz pF Reverse transfer capacitance C 1.5 rss DS GS Output capacitance C 30 oss 10 V I = 1 A V Rise time t D OUT 15 r V GS 0 V Turn-on time t 35 on R = 200 L 50 Switching time ns Fall time t 7 f V 200 V DD Turn-off time t 55 off Duty 1%, t = 10 s w Total gate charge Q 7 g V 400 V, V = 10 V, I = 2 A 4 nC Gate-source charge Q gs DD GS D Gate-drain charge Q 3 gd Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Continuous drain reverse current I 2 A DR (Note 1) Pulse drain reverse current (Note 1) I 8 A DRP Forward voltage (diode) V I = 2 A, V = 0 V 1.7 V DSF DR GS Reverse recovery time t I = 2 A, V = 0 V, 550 ns rr DR GS dI /dt = 100 A/s Reverse recovery charge Q 2.2 C rr DR Marking Note 4 : A line under a Lot No. identifies the indication of product Labels G /RoHS COMPATIBLE or G /RoHS Pb K2Q60D Part No. (or abbreviation code) Please contact your TOSHIBA sales representative for details as to Lot No. environmental matters such as the RoHS compatibility of Product. The RoHS is Directive 2002/95/EC of the European Parliament and Note 4 of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment 2 2010-08-30