X-On Electronics has gained recognition as a prominent supplier of TK31V60W,LVQ MOSFETs across the USA, India, Europe, Australia, and various other global locations. TK31V60W,LVQ MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TK31V60W,LVQ Toshiba

TK31V60W,LVQ electronic component of Toshiba
TK31V60W,LVQ Toshiba
TK31V60W,LVQ MOSFETs
TK31V60W,LVQ  Semiconductors

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Part No. TK31V60W,LVQ
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET N-Ch DTMOSIV 600 V 240W 3000pF 30.8A
Datasheet: TK31V60W,LVQ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
26: USD 5.005 ea
Line Total: USD 130.13 
Availability - 0
MOQ: 26  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 26
Multiples : 1
26 : USD 5.005

0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 2500
Multiples : 2500
2500 : USD 8.1929
5000 : USD 7.7501
10000 : USD 7.3072
15000 : USD 6.8643
20000 : USD 6.4215

0
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 2500
Multiples : 2500
2500 : USD 6.347

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
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Packaging
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Brand
Technology Type
Ciss - Input Capacitance
Fall Time
Rise Time
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Typical Turn-Off Delay Time
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Length
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Transistor Type
Width
Cnhts
Hts Code
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We are delighted to provide the TK31V60W,LVQ from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TK31V60W,LVQ and other electronic components in the MOSFETs category and beyond.

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TK31V60W MOSFETs Silicon N-Channel MOS (DTMOS) TK31V60WTK31V60WTK31V60WTK31V60W 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Low drain-source on-resistance: R = 0.078 (typ.) DS(ON) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: V = 2.7 to 3.7 V (V = 10 V, I = 1.5 mA) th DS D 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Source1 3,4: Source2 5: Drain (Heatsink) Notice: Please use the source1 pin for gate input signal return. Make sure that the main current flows into the source2 pins. DFN8x8 4. Absolute Maximum Ratings (Note) (T = 25 unless otherwise specified) 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) a aaa Characteristics Symbol Rating Unit Drain-source voltage V 600 V DSS Gate-source voltage V 30 GSS Drain current (DC) (Note 1) I 30.8 A D Drain current (pulsed) (Note 1) I 123 DP Power dissipation (T = 25) P 240 W c D Single-pulse avalanche energy (Note 2) E 338 mJ AS Avalanche current I 7.7 A AR Reverse drain current (DC) (Note 1) I 30.8 DR Reverse drain current (pulsed) (Note 1) I 123 DRP Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2013-06 2014-02-25 1 Rev.2.0TK31V60W 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 0.52 /W th(ch-c) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: V = 90 V, T = 25 (initial), L = 10 mH, R = 25 , I = 7.7 A DD ch G AR Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2014-02-25 2 Rev.2.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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