X-On Electronics has gained recognition as a prominent supplier of AUIRLZ24NS MOSFETs across the USA, India, Europe, Australia, and various other global locations. AUIRLZ24NS MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

AUIRLZ24NS Infineon

AUIRLZ24NS electronic component of Infineon
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Part No.AUIRLZ24NS
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET N-CHANNEL 55 / 60
Datasheet: AUIRLZ24NS Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 2.1698
10 : USD 1.8155
100 : USD 1.4766
500 : USD 1.1968
1000 : USD 1.0364
2000 : USD 0.9644
5000 : USD 0.9528
10000 : USD 0.9528
25000 : USD 0.9516
N/A

Obsolete
   
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We are delighted to provide the AUIRLZ24NS from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AUIRLZ24NS and other electronic components in the MOSFETs category and beyond.

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AUTOMOTIVE GRADE Features D Advanced Process Technology Logic Level Gate Drive V 55V DSS 175C Operating Temperature R max. 0.06 DS(on) Fast Switching G Repetitive Avalanche Allowed up to Tjmax I 18A D Lead-Free, RoHS Compliant S Automotive Qualified * D D Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional S features of this design are a 175C junction operating tempera- D S G G ture, fast switching speed and improved repetitive avalanche TO-262 rating . These features combine to make this design an ex- 2 D Pak tremely efficient and reliable device for use in Automotive AUIRLZ24NL AUILZ24NS applications and a wide variety of other applications. Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity Tube 50 AUIRLZ24NS AUIRLZ24NS D2-Pak Tape and Reel Left 800 AUIRLZ24NSTRL AUIRLZ24NL TO-262 Tube 50 AUIRLZ24NL Absolute Maximum Ratings functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. % & ()* Parameter Max. Units 18 I T = 25C Continuous Drain Current, V 10V D C GS 13 A I T = 100C Continuous Drain Current, V 10V D C GS 72 I Pulsed Drain Current DM P T = 25C Maximum Power Dissipation 3.8 W D A P T = 25C Maximum Power Dissipation 45 W D C Linear Derating Factor 0.30 W/C V Gate-to-Source Voltage 16 V GS 68 E Single Pulse Avalanche Energy mJ AS 11 I Avalanche Current A AR 4.5 E Repetitive Avalanche Energy mJ AR dv/dt Peak Diode Recovery 5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Thermal Resistance Parameter Typ. Max. Units RJunction-to-Case 3.3 JC C/W R Junction-to-Ambient (PCB Mounted, steady-state)** 40 JA HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at 2 . 3 0 2 444 444 2 2 5 ,2* - 5 & ,6 3 0 2 ) 444 , ,7+ 444 28() & ()* - 5 + 444 444 , ,7, 2 5 +,2* - 5 ++ . A 444 444 , ,9 2 5 ,2* - 5 ++ 444 444 , +, 2 5 : ,2* - 5 , 2 < 2 + , 444 & , 2 2 5 2 * - 5 & ,6 / = 1 444 444 2 5 & 2* - 5 ++ 444 444 & 2 5 2* 2 5 ,2 6 - . > 0 ) 444 444 & , 2 5 ::2* 2 5 ,2* 5 + ,() < / > 0 444 444 +,, 2 5 +72 - < > 0 444 444 +,, 2 5 +72 < ) 444 444 + - 5 ++ < ) 444 444 1 9 ) 2 5 ::2 < . % ) 444 444 = 2 5 ,2* / 7 +1 A . 444 9 + 444 2 5 &=2 444 9: 444 - 5 ++ . 444 &, 444 5 +&, 2 5 ,2 / 444 & 444 5 & :, / +, 3 * > - - 9 444 444 C ) - ) 444 :=, 444 2 5 ,2 ) A ) 444 +1, 444 / 2 5 & 2 ) ) 444 7+ 444 B 5 + , CD* / D - ) ) A / 444 444 += 3 . % G E ) 444 444 9& 3 . % F S 2 . / 2 444 444 + 1 2 5 & ()* - 5 ++ * 2 5 ,2 444 7, , 5 & ()* - 5 ++ ) 444 +1, &,, ) 8 5 +,, 86 / A - > G> % F ++ % 2 5 & 2* 5 & ()* > 5 9 ,6C* 5 & * - 5 ++ / +&% - ++ * 8 & , 86 * 2 2 * +9 () E 1,,6 &H I - >J&:K LL M + N E)3 / : < +, % / N O K : & &,+ - . / 0 / &1* &,+

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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