TSM120N06LCS Taiwan Semiconductor N-Channel Power MOSFET 60V, 23A, 12m FEATURES KEY PERFORMANCE PARAMETERS Low R to minimize conductive losses PARAMETER VALUE UNIT DS(ON) Logic level V 60 V DS Low gate charge for fast power switching R V = 10V 12 GS DS(on) 100% UIS and R tested g m Compliant to RoHS directive 2011/65/EU and in (max) V = 4.5V 15 GS accordance to WEEE 2002/96/EC Q 19 nC g Halogen-free according to IEC 61249-2-21 APPLICATIONS Motor Control for BLDC Battery Power Management SOP-8 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 60 V DS Gate-Source Voltage V 20 V GS T = 25C 23 C Continuous Drain Current I A D T = 25C 10 A (Note 1) Pulsed Drain Current I 92 A DM (Note 2) Single Pulse Avalanche Current I 19 A AS (Note 2) Single Pulse Avalanche Energy E 54 mJ AS T = 25C 12.5 C Total Power Dissipation P W D T = 125C 2.5 C T = 25C 2.2 A Total Power Dissipation P W D T = 125C 0.4 A Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Case Thermal Resistance R 10 C/W JC Junction to Ambient Thermal Resistance R 57 C/W JA Thermal Performance Notes: R is the sum of the junction-to-case and case-to-ambient thermal resistances. The case- JA thermal reference is defined at the solder mounting surface of the drain pins. R is guaranteed by design while R is JA CA determined by the users board design. 1 Version: C1710 TSM120N06LCS Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 3) Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 60 -- -- V GS D DSS Gate Threshold Voltage V = V , I = 250A V 1.2 1.7 2.5 GS DS D GS(TH) V Gate-Source Leakage Current V = 20V, V = 0V I -- -- 100 nA GS DS GSS V = 0V, V = 60V GS DS -- -- 1 Drain-Source Leakage Current I A V = 0V, V = 60V DSS GS DS -- -- 100 T = 125C J V = 10V, I = 10A -- 10.4 12 GS D Drain-Source On-State Resistance R m DS(on) V = 4.5V, I = 10A -- 11.9 15 GS D V = 5V, I = 10A Forward Transconductance g -- 38 -- S DS D fs (Note 4) Dynamic V = 10V, V = 30V, GS DS Total Gate Charge Q -- 37 -- g I = 10A D Total Gate Charge Q -- 19 -- g nC V = 4.5V, V = 30V, GS DS Gate-Source Charge Q -- 6 -- gs I = 10A D Gate-Drain Charge Q -- 8 -- gd Input Capacitance C -- 2193 -- iss V = 0V, V = 30V GS DS Output Capacitance C -- 208 -- pF oss f = 1.0MHz Reverse Transfer Capacitance C -- 88 -- rss Gate Resistance f = 1.0MHz, open drain R 0.4 1.5 3 g (Note 4) Switching Turn-On Delay Time t -- 6.4 -- d(on) Turn-On Rise Time t -- 3.6 -- r V = 10V, V = 30V, GS DS ns Turn-Off Delay Time I = 11A, R = 2, t -- 23 -- D G d(off) Turn-Off Fall Time t -- 5 -- f (Note 3) Source-Drain Diode Forward Voltage V -- -- 1 V V = 0V, I = 10A SD GS S Reverse Recovery Time t -- 17 -- ns rr I = 10A , S Reverse Recovery Charge Q -- 13 -- nC dI/dt = 100A/s rr Notes: 1. Current limited by package. 2. L = 0.3mH, V = 10V, V = 30V, R = 25, I = 19A, Starting T = 25C GS DD G AS J 3. Pulse test: Pulse Width 300s, duty cycle 2%. 4. Switching time is essentially independent of operating temperature. ORDERING INFORMATION PART NO. PACKAGE PACKING TSM120N06LCS RLG SOP-8 2,500pcs / 13 Reel 2 Version: C1710