TSM170N06 Taiwan Semiconductor N-Channel Power MOSFET 60V, 38A, 17m FEATURES KEY PERFORMANCE PARAMETERS 100% avalanche tested PARAMETER VALUE UNIT Suitable for 5V drive applications V 60 V DS Pb-free plating V =10V 17 RoHS compliant GS R (max) m DS(on) Halogen-free mold compound V =4.5V 20 GS Q g 15 nC APPLICATION SMPS Synchronous Rectification Networking DC-DC Power System TO-251 (IPAK) TO-251S (IPAK SL) TO-252 (DPAK) Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 60 V DS Gate-Source Voltage V 20 V GS T = 25C 38 C (Note 1) Continuous Drain Current I A D T = 100C 24 C (Note 2) Pulsed Drain Current I 152 A DM (Note 3) Single Pulsed Avalanche Energy E 20 mJ AS (Note 3) Single Pulsed Avalanche Current I 20 A AS Total Power Dissipation T = 25C P 46 W C DTOT Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Case Thermal Resistance R 2.7 C/W JC Junction to Ambient Thermal Resistance R C/W JA 62 Notes: R is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined JA at the solder mounting surface of the drain pins. R is guaranteed by design while R is determined by the users board JA CA design. R shown below for single device operation on FR-4 PCB in still air JA Document Number: DS P0000172 1 Version: B15 TSM170N06 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 4) Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 60 -- -- V GS D DSS Gate Threshold Voltage 1.2 1.7 V V = V , I = 250uA V 2.5 DS GS D GS(TH) Gate Body Leakage nA V = 20V, V = 0V I -- -- 100 GS DS GSS V = 60V, V = 0V -- -- 1 DS GS Zero Gate Voltage Drain Current A V = 48V, V = 0V, I DSS DS GS -- -- 10 T = 125C J V = 10V, I = 20A -- 15 17 GS D Drain-Source On-State Resistance R m DS(ON) V = 4.5V, I = 10A -- 17.5 20 GS D (Note 5) Dynamic Total Gate Charge Q -- 15 -- g V = 30V, I = 10A, DS D Gate-Source Charge Q -- 5.5 -- nC gs V = 4.5V GS Gate-Drain Charge Q -- 5 -- gd Input Capacitance C -- 900 -- iss V = 25V, V = 0V, DS GS Output Capacitance C -- 130 -- pF oss f = 1.0MHz Reverse Transfer Capacitance C -- 90 -- rss Gate Resistance F = 1MHz, open drain 2.2 R -- -- g (Note 6) Switching Turn-On Delay Time t -- 8.6 -- d(on) Turn-On Rise Time t -- -- 24.2 V = 10V, V = 15V, r GS DS ns R = 6, I = 1A Turn-Off Delay Time t -- 32.3 -- G D d(off) Turn-Off Fall Time t -- 7.9 -- f (Note 4) Source-Drain Diode Diode Forward Voltage V =0V, I =10A V -- -- 1 V GS S SD Reverse Recovery Time t -- 18 -- ns V = 0V, I = 10A rr GS S dI /dt = 100A/s 10 -- Reverse Recovery Charge F Q -- nC rr Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature 3. L = 0.1mH, I = 20A, V = 50V, R = 25, Starting T = 25C AS DD G J 4. Pulse test: PW 300s, duty cycle 2% 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. Document Number: DS P0000172 2 Version: B15